上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIS496EDNT-T1-GE3MOSFET N-CH 30V 50A PPAK1212-8 Vishay Siliconix |
9,624 | - |
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数据手册 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.5V @ 250µA | 45 nC @ 10 V | ±20V | 1515 pF @ 15 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIS626DN-T1-GE3MOSFET N-CH 25V 16A PPAK1212-8 Vishay Siliconix |
9,892 | - |
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数据手册 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 16A (Tc) | 2.5V, 10V | 9mOhm @ 10A, 10V | 1.4V @ 250µA | 60 nC @ 10 V | ±12V | 1925 pF @ 15 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIS778DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 Vishay Siliconix |
2,587 | - |
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数据手册 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 5mOhm @ 10A, 10V | 2.2V @ 250µA | 42.5 nC @ 10 V | ±20V | 1390 pF @ 15 V | Schottky Diode (Body) | 52W (Tc) | -50°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SMM2348ES-T1-GE3MOSFET N-CH 30V 8A SOT23-3 Vishay Siliconix |
5,262 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 24mOhm @ 12A, 10V | 2.5V @ 250µA | 14.5 nC @ 10 V | ±20V | 540 pF @ 15 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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SQD100N03-3M2L_GE3MOSFET N-CH 30V 100A TO252AA Vishay Siliconix |
8,547 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 20A, 10V | 2.5V @ 250µA | 116 nC @ 10 V | ±20V | 6316 pF @ 15 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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SQD100N03-3M4_GE3MOSFET N-CH 30V 100A TO252AA Vishay Siliconix |
8,951 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 10V | 3.4mOhm @ 20A, 10V | 3.5V @ 250µA | 124 nC @ 10 V | ±20V | 7349 pF @ 15 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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SQD50N04-4M5L_GE3MOSFET N-CH 40V 50A TO252AA Vishay Siliconix |
9,114 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 130 nC @ 10 V | ±20V | 5860 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SQM100N02-3M5L_GE3MOSFET N-CH 20V 100A TO263 Vishay Siliconix |
8,719 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
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SQM120N02-1M3L_GE3MOSFET N-CH 20V 120A TO263 Vishay Siliconix |
6,251 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 120A (Tc) | 4.5V, 10V | 1.3mOhm @ 40A, 10V | 2.5V @ 250µA | 290 nC @ 10 V | ±20V | 14500 pF @ 10 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
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SQM120N06-06_GE3MOSFET N-CH 60V 120A TO263 Vishay Siliconix |
3,101 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 6mOhm @ 30A, 10V | 3.5V @ 250µA | 145 nC @ 10 V | ±20V | 6495 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
