上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2N6660JTXL02MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix |
8,088 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
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2N6660JTXV02MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix |
9,980 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 990mA (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AD (TO-39) |
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2N6661JAN02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
7,635 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
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2N6661JTXL02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
6,235 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
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2N6661JTXV02MOSFET N-CH 90V 860MA TO39 Vishay Siliconix |
6,269 | - |
|
数据手册 |
- | TO-205AD, TO-39-3 Metal Can | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 90 V | 860mA (Tc) | 5V, 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 725mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-39 |
|
IRFD113MOSFET N-CH 60V 800MA 4DIP Vishay Siliconix |
2,644 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFD213MOSFET N-CH 250V 450MA 4DIP Vishay Siliconix |
8,412 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 450mA (Ta) | - | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | - | 140 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFD9123MOSFET P-CH 100V 1A 4DIP Vishay Siliconix |
8,128 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | - | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | - | 390 pF @ 25 V | - | - | - | - | - | Through Hole | 4-HVMDIP |
|
IRFP27N60KMOSFET N-CH 600V 27A TO247-3 Vishay Siliconix |
5,406 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 220mOhm @ 16A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SI4196DY-T1-GE3MOSFET N-CH 20V 8A 8SO Vishay Siliconix |
8,644 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 1.8V, 4.5V | 27mOhm @ 8A, 4.5V | 1V @ 250µA | 22 nC @ 8 V | ±8V | 830 pF @ 10 V | - | 2W (Ta), 4.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
