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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SUP50N10-21P-GE3MOSFET N-CH 100V 50A TO220AB Vishay Siliconix |
9,752 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 6V, 10V | 21mOhm @ 10A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 2055 pF @ 50 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SQM120N04-1M7_GE3MOSFET N-CH 40V 120A TO263 Vishay Siliconix |
6,665 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.7mOhm @ 30A, 10V | 3.5V @ 250µA | 310 nC @ 10 V | ±20V | 17350 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
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SIR808DP-T1-GE3MOSFET N-CH 25V 20A PPAK SO-8 Vishay Siliconix |
3,418 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 17A, 10V | 2.5V @ 250µA | 22.8 nC @ 10 V | ±20V | 815 pF @ 12.5 V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SUD45P04-16P-GE3MOSFET P-CH 40V 36A TO252AA Vishay Siliconix |
7,169 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 36A (Tc) | 4.5V, 10V | 16.2mOhm @ 14A, 20V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 2765 pF @ 20 V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SUD50N02-09P-GE3MOSFET N-CH 20V 20A TO252 Vishay Siliconix |
7,590 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Ta) | 4.5V, 10V | 14mOhm @ 20A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±20V | 1300 pF @ 10 V | - | 39.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 |
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SUD50N03-12P-GE3MOSFET N-CH 30V 16.8A TO252 Vishay Siliconix |
6,444 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16.8A (Ta) | 4.5V, 10V | 17mOhm @ 20A, 10V | 3V @ 250µA | 42 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SUM120N04-1M7L-GE3MOSFET N-CH 40V 120A TO263 Vishay Siliconix |
7,451 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 17mOhm @ 30A, 10V | 2.5V @ 250µA | 285 nC @ 10 V | ±20V | 11685 pF @ 20 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUM25P10-138-E3MOSFET N-CH 100V 16.7A TO263 Vishay Siliconix |
7,921 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16.7A (Tc) | 6V, 10V | 13.8mOhm @ 6A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 2110 pF @ 25 V | - | 3.75W (Ta), 88.2W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUM50P10-42-E3MOSFET N-CH 100V 36A TO263 Vishay Siliconix |
7,256 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 4.5V, 10V | 4.2mOhm @ 14A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 4600 pF @ 50 V | - | 18.8W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUP25P10-138-GE3MOSFET N-CH 100V 16.3A TO220AB Vishay Siliconix |
2,516 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16.3A (Tc) | 6V, 10V | 13.8mOhm @ 6A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 2100 pF @ 50 V | - | 3.1W (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
