| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI4752DY-T1-GE3MOSFET N-CH 30V 25A 8SO Vishay Siliconix |
9,002 | - |
|
数据手册 |
SkyFET®, TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Tc) | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 2.2V @ 1mA | 43 nC @ 10 V | ±20V | 1700 pF @ 15 V | Schottky Diode (Body) | 3W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI8469DB-T2-E1MOSFET P-CH 8V 4.6A 4MICROFOOT Vishay Siliconix |
9,082 | - |
|
数据手册 |
TrenchFET® | 4-UFBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 4.6A (Ta) | 4.5V | 64mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 17 nC @ 4.5 V | ±5V | 900 pF @ 4 V | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-Microfoot |
|
SI8805EDB-T2-E1MOSFET P-CH 8V 4MICROFOOT Vishay Siliconix |
8,402 | - |
|
数据手册 |
TrenchFET® | 4-XFBGA, CSPBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 2.2A (Ta) | 1.2V, 4.5V | 68mOhm @ 1.5A, 4.5V | 700mV @ 250µA | 10 nC @ 4.5 V | ±5V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-Microfoot |
|
SI8809EDB-T2-E1MOSFET P-CH 20V 1.9A MICROFOOT Vishay Siliconix |
4,764 | - |
|
数据手册 |
TrenchFET® | 4-XFBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.94 (Ta) | 1.8V, 4.5V | 90mOhm @ 1.5A, 4.5V | 900mV @ 250µA | 15 nC @ 8 V | ±8V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-Microfoot |
|
SIB404DK-T1-GE3MOSFET N-CH 12V 9A PPAK SC75-6 Vishay Siliconix |
4,617 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SC-75-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 9A (Tc) | 4.5V | 19mOhm @ 3A, 4.5V | 800mV @ 250µA | 15 nC @ 4.5 V | ±5V | - | - | 2.5W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-75-6 |
|
SIB437EDKT-T1-GE3MOSFET P-CH 8V 9A PPAK TSC75-6 Vishay Siliconix |
6,792 | - |
|
数据手册 |
TrenchFET® | PowerPAK® TSC-75-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 9A (Tc) | 1.2V, 4.5V | 34mOhm @ 3A, 4.5V | 700mV @ 250µA | 16 nC @ 4.5 V | ±5V | - | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® TSC75-6 |
|
SIR814DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
2,110 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.3V @ 250µA | 86 nC @ 10 V | ±20V | 3800 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIS776DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 Vishay Siliconix |
4,175 | - |
|
数据手册 |
SkyFET®, TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 6.2mOhm @ 10A, 10V | 2.5V @ 250µA | 36 nC @ 10 V | ±20V | 1360 pF @ 15 V | Schottky Diode (Body) | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
SQM120N03-1M5L_GE3MOSFET N-CH 30V 120A TO263 Vishay Siliconix |
4,546 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 30A, 10V | 2.5V @ 250µA | 270 nC @ 10 V | ±20V | 15605 pF @ 15 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 |
|
SQM50N04-4M1_GE3MOSFET N-CH 40V 50A TO263 Vishay Siliconix |
8,206 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 4.1mOhm @ 30A, 10V | 3.5V @ 250µA | 105 nC @ 10 V | ±20V | 6715 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |

