| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI4128BDY-T1-GE3MOSFET N-CH 30V Vishay Siliconix |
6,320 | - |
|
数据手册 |
TrenchFET® | - | Tape & Reel (TR) | Obsolete | - | - | - | 8.3A (Ta), 12A (Tc) | 4.5V, 10V | - | - | - | ±25V | - | - | - | - | - | - | - | - |
|
SIR774DP-T1-GE3MOSFET N-CH 30V Vishay Siliconix |
5,561 | - |
|
数据手册 |
SkyFET®, TrenchFET® | - | Tape & Reel (TR) | Obsolete | - | - | - | 32A (Ta), 40A (Tc) | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - | - |
|
SQD40030E_GE3MOSFET N-CHANNEL 40V TO252AA Vishay Siliconix |
3,545 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | - | - | 65 nC @ 10 V | - | - | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
|
SQM40010EL_GE3MOSFET N-CH 40V 120A D2PAK Vishay Siliconix |
3,475 | - |
|
数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 2.5V @ 250µA | 230 nC @ 10 V | ±20V | 17100 pF @ 20 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
|
SI4010DY-T1-GE3MOSFET N-CHANNEL 30V 31.3A 8SO Vishay Siliconix |
6,340 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 31.3A (Tc) | 4.5V, 10V | 3.4mOhm @ 15A, 10V | 2.3V @ 250µA | 77 nC @ 10 V | +20V, -16V | 3595 pF @ 15 V | - | 6W (Tc) | -55°C ~ 150°C (TA) | - | - | Surface Mount | 8-SOIC |
|
SI4776DY-T1-GE3MOSFET N-CHANNEL 30V 11.9A 8SO Vishay Siliconix |
7,476 | - |
|
数据手册 |
SkyFET®, TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.9A (Tc) | 4.5V, 10V | 16mOhm @ 10A, 10V | 2.3V @ 1mA | 17.5 nC @ 10 V | ±20V | 521 pF @ 15 V | - | 4.1W (Tc) | -55°C ~ 150°C (TA) | - | - | Surface Mount | 8-SOIC |
|
SQP90142E_GE3MOSFET N-CH 200V 78.5A TO220AB Vishay Siliconix |
3,407 | - |
|
数据手册 |
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 78.5A (Tc) | 10V | 15.3mOhm @ 20A, 10V | 3.5V @ 250µA | 85 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-220AB |
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SI1002R-T1-GE3MOSFET N-CH 30V 610MA SC75A Vishay Siliconix |
4,026 | - |
|
数据手册 |
- | SC-75A | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 610mA (Ta) | 1.5V, 4.5V | 560mOhm @ 500mA, 4.5V | 1V @ 250µA | 2 nC @ 8 V | ±8V | 36 pF @ 15 V | - | 220mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-75A |
|
SI1428EDH-T1-GE3MOSFET N-CHANNEL 30V 4A SC70-6 Vishay Siliconix |
7,364 | - |
|
数据手册 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Tc) | 2.5V, 10V | 45mOhm @ 3.7A, 10V | 1.3V @ 250µA | 13.5 nC @ 10 V | ±12V | - | - | 2.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-70-6 |
|
SIR798DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 Vishay Siliconix |
6,743 | - |
|
数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.05mOhm @ 20A, 10V | 2.5V @ 250µA | 130 nC @ 10 V | ±20V | 5050 pF @ 15 V | Schottky Diode (Body) | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |

