电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TPH1500CNH1,LQ150V U-MOS VIII-H SOP-ADVANCE(N) Toshiba Semiconductor and Storage |
7,540 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | - | ±20V | 2200 pF @ 75 V | - | 2.5W (Ta), 170W (Tc) | 150°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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TJ40S04M3L(T6L1,NQMOSFET P-CH 40V 40A DPAK Toshiba Semiconductor and Storage |
1,754 | - |
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数据手册 |
U-MOSVI | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83 nC @ 10 V | +10V, -20V | 4140 pF @ 10 V | - | 68W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TJ30S06M3L(T6L1,NQMOSFET P-CH 60V 30A DPAK Toshiba Semiconductor and Storage |
4,000 | - |
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数据手册 |
U-MOSVI | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta) | 6V, 10V | 21.8mOhm @ 15A, 10V | 3V @ 1mA | 80 nC @ 10 V | +10V, -20V | 3950 pF @ 10 V | - | 68W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TPH3R008QM,LQ80V UMOS9-H SOP-ADVANCE(N) 3MOHM Toshiba Semiconductor and Storage |
10,863 | - |
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数据手册 |
U-MOSX-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.5V @ 900µA | 71 nC @ 10 V | ±20V | 7200 pF @ 40 V | - | 3W (Ta), 180W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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XPH1R104PS,L1XHQ40V UMOS9-H SOP ADVANCE Toshiba Semiconductor and Storage |
5,000 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 3W (Ta), 132W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | 8-SOP Advance (5x5) |
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TK10P50W,RQPB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage |
1,609 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | 150°C | - | - | Surface Mount | DPAK |
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TK60S06K3L(T6L1,NQMOSFET N-CH 60V 60A DPAK Toshiba Semiconductor and Storage |
1,755 | - |
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数据手册 |
U-MOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Ta) | 6V, 10V | 8mOhm @ 30A, 10V | 3V @ 1mA | 60 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 88W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK8P65W,RQPB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage |
1,974 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | 150°C | - | - | Surface Mount | DPAK |
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TPH1400CQ5,LQ150V UMOS 10-H SOP ADVANCE Toshiba Semiconductor and Storage |
4,975 | - |
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数据手册 |
U-MOSX-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 77A (Ta), 32A (Tc) | 8V, 10V | 14.1mOhm @ 16A, 10V | 4.5V @ 600µA | 31 nC @ 10 V | ±20V | 3800 pF @ 75 V | - | 3W (Ta), 170W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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TK12P50W,RQPB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage |
1,877 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | 150°C | - | - | Surface Mount | DPAK |
