电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK16V60W5,LVQPB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage |
2,260 | - |
|
数据手册 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 245mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 139W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
|
|
TK14V65W,LQPB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage |
2,394 | - |
|
数据手册 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 280mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 139W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
|
|
TK5R0A15Q5,S4X150V UMOS10-HSD TO-220SIS 5MOHM Toshiba Semiconductor and Storage |
380 | - |
|
数据手册 |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 76A (Ta), 76A (Tc) | 8V, 10V | 5mOhm @ 38A, 10V | 4.5V @ 2.2mA | 96 nC @ 10 V | ±20V | 7820 pF @ 75 V | - | 53W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
|
|
TK25V60X5,LQPB-F POWER MOSFET TRANSISTOR DTM Toshiba Semiconductor and Storage |
2,488 | - |
|
数据手册 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 150mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
|
|
TK22V65X5,LQPB-F POWER MOSFET TRANSISTOR DFN Toshiba Semiconductor and Storage |
2,500 | - |
|
数据手册 |
DTMOSIV-H | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Ta) | 10V | 170mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
|
TK16G60W,RVQMOSFET N CH 600V 15.8A D2PAK Toshiba Semiconductor and Storage |
984 | - |
|
数据手册 |
DTMOSIV | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
TK095N65Z5,S1F(S650V DTMOS6-HIGH SPEED DIODE Toshiba Semiconductor and Storage |
195 | - |
|
数据手册 |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 29A (Ta) | 10V | 95mOhm @ 14.5A, 10V | 4.5V @ 1.27mA | 50 nC @ 10 V | ±30V | 2880 pF @ 300 V | - | 230W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
|
TK068N65Z5,S1F650V DTMOS6-HSD TO-247 68MOHM Toshiba Semiconductor and Storage |
235 | - |
|
数据手册 |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 37A (Ta) | 10V | 68mOhm @ 18.5A, 10V | 4.5V @ 1.69mA | 68 nC @ 10 V | ±30V | 3765 pF @ 300 V | - | 270W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
TK31V60W,LVQMOSFET N-CH 600V 30.8A 4DFN Toshiba Semiconductor and Storage |
2,455 | - |
|
数据手册 |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 98mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | 150°C (TJ) | - | - | Surface Mount | 4-DFN-EP (8x8) |
|
|
TW048Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 48 Toshiba Semiconductor and Storage |
243 | - |
|
数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 69mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
