电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK20G60W,RVQMOSFET N CH 600V 20A D2PAK Toshiba Semiconductor and Storage |
1,960 | - |
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数据手册 |
DTMOSIV | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
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XPQ1R004PB,LXHQ40V U-MOS IX-H L-TOGL 1.0MOHM Toshiba Semiconductor and Storage |
4,500 | - |
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数据手册 |
U-MOSIX-H | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 1mOhm @ 100A, 10V | 3V @ 500µA | 84 nC @ 10 V | ±20V | 6890 pF @ 10 V | - | 230W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | L-TOGL™ |
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TK9R6E15Q5,S1X150V UMOS10-HSD TO-220 9.6MOHM Toshiba Semiconductor and Storage |
380 | - |
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数据手册 |
U-MOSX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 104A (Ta), 52A (Tc) | 8V, 10V | 9.6mOhm @ 26A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±20V | 3690 pF @ 75 V | - | 200W (Tc) | 175°C | - | - | Through Hole | TO-220 |
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TPW5200FNH,L1QPB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage |
4,655 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 800mW (Ta), 142W (Tc) | 150°C | - | - | Surface Mount | 8-DSOP Advance |
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TK13A50D(STA4,Q,M)MOSFET N-CH 500V 13A TO220SIS Toshiba Semiconductor and Storage |
110 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Ta) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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XPJR6604PB,LXHQ40V; UMOS9; 0.66MOHM; S-TOGL Toshiba Semiconductor and Storage |
7,017 | - |
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数据手册 |
U-MOSIX-H | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 0.66mOhm @ 100A, 10V | 3V @ 1mA | 128 nC @ 10 V | ±20V | 11380 pF @ 10 V | - | 375W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | S-TOGL™ |
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TK160F10N1L,LQMOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage |
914 | - |
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数据手册 |
U-MOSVIII-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Ta) | 6V, 10V | 2.4mOhm @ 80A, 10V | 3.5V @ 1mA | 122 nC @ 10 V | ±20V | 10100 pF @ 10 V | - | 375W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
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TK7R4A15Q5,S4X150V UMOS10-HSD TO-220SIS 7.4MOH Toshiba Semiconductor and Storage |
400 | - |
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数据手册 |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 57A (Tc) | 8V, 10V | 7.4mOhm @ 28.5A, 10V | 4.5V @ 1.4mA | 66 nC @ 10 V | ±20V | 4970 pF @ 75 V | - | 46W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TK210V65Z,LQMOSFET N-CH 650V 15A 5DFN Toshiba Semiconductor and Storage |
4,630 | - |
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数据手册 |
DTMOSVI | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 210mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | 150°C | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK7R2E15Q5,S1X150V UMOS10-HSD TO-220 7.2MOHM Toshiba Semiconductor and Storage |
400 | - |
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数据手册 |
U-MOSX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Ta), 84A (Tc) | 8V, 10V | 7.2mOhm @ 42A, 10V | 4.5V @ 1.4mA | 66 nC @ 10 V | ±20V | 4970 pF @ 75 V | - | 230W (Tc) | 175°C | - | - | Through Hole | TO-220 |
