电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK13P25D,RQPB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage |
2,026 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | 150°C | - | - | Surface Mount | DPAK |
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TK40S06N1L,LQMOSFET N-CH 60V 40A DPAK Toshiba Semiconductor and Storage |
2,618 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TPH6R003NL,LQMOSFET N CH 30V 38A 8SOP Toshiba Semiconductor and Storage |
2,447 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 6mOhm @ 19A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 1.6W (Ta), 34W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPN4R303NL,L1QMOSFET N-CH 30V 40A 8TSON Toshiba Semiconductor and Storage |
4,990 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 700mW (Ta), 34W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPH12008NH,L1QMOSFET N-CH 80V 24A 8SOP Toshiba Semiconductor and Storage |
4,980 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24A (Tc) | 10V | 12.3mOhm @ 12A, 10V | 4V @ 300µA | 22 nC @ 10 V | ±20V | 1900 pF @ 40 V | - | 1.6W (Ta), 48W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPH6R008QM,LQ80V UMOS9-H SOP-ADVANCE(N) 6MOHM Toshiba Semiconductor and Storage |
9,955 | - |
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数据手册 |
U-MOSX-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 59A (Tc) | 6V, 10V | 6mOhm @ 29.5A, 10V | 3.5V @ 400µA | 38 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 3W (Ta), 135W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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TPCP8011,LFPB-F POWER MOSFET TRANSISTOR PS- Toshiba Semiconductor and Storage |
2,723 | - |
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数据手册 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 5A (Ta) | 6V, 10V | 51.2mOhm @ 2.5A, 10V | 3V @ 1mA | 11.8 nC @ 10 V | ±20V | 505 pF @ 10 V | - | 940mW (Ta) | 175°C | Automotive | AEC-Q101 | Surface Mount | PS-8 |
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TK3P50D,RQ(SMOSFET N-CH 500V 3A DPAK Toshiba Semiconductor and Storage |
1,399 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Ta) | 10V | 3Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK2P90E,RQPB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage |
5,943 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 2A (Ta) | 10V | 5.9Ohm @ 1A, 10V | 4V @ 200µA | 12 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 80W (Tc) | 150°C | - | - | Surface Mount | DPAK |
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TPH2R805PL,LQPB-F POWER MOSFET TRANSISTOR SOP Toshiba Semiconductor and Storage |
2,980 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.4V @ 500µA | 73 nC @ 10 V | ±20V | 5175 pF @ 22.5 V | - | 830mW (Ta), 116W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
