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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM6K819R,LFN-CH MOSFET, 100 V, 10 A, 0.0258 Toshiba Semiconductor and Storage |
11,897 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta) | 4.5V, 10V | 25.8mOhm @ 4A, 10V | 2.5V @ 100µA | 8.5 nC @ 4.5 V | ±20V | 1110 pF @ 15 V | - | 1.5W (Ta) | 175°C | Automotive | AEC-Q101 | Surface Mount | 6-TSOP-F |
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SSM6K818R,LFN-CH MOSFET 30V, +/-20V, 15A ,0. Toshiba Semiconductor and Storage |
5,583 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 12mOhm @ 4A, 4.5V | 2.1V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1130 pF @ 15 V | - | 1.5W (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | 6-TSOP-F |
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SSM6K804R,LFN-CH MOSFET 40V, +/-20V, 12A ,0. Toshiba Semiconductor and Storage |
5,180 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Ta) | 4.5V, 10V | 12mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1110 pF @ 20 V | - | 1.5W (Ta) | 175°C | - | - | Surface Mount | 6-TSOP-F |
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TP89R103NL,LQMOSFET N CH 30V 15A 8SOP Toshiba Semiconductor and Storage |
2,200 | - |
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数据手册 |
U-MOSVIII-H | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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TPH6R004PL,LQMOSFET N-CH 40V 87A/49A 8SOP Toshiba Semiconductor and Storage |
2,323 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 49A (Tc) | 4.5V, 10V | 6mOhm @ 24.5A, 10V | 2.4V @ 200µA | 30 nC @ 10 V | ±20V | 2700 pF @ 20 V | - | 81W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TPCC8105,L1QPB-F POWER MOSFET TRANSISTOR TSO Toshiba Semiconductor and Storage |
3,023 | - |
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数据手册 |
U-MOSVI | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 7.8mOhm @ 11.5A, 10V | 2V @ 500µA | 76 nC @ 10 V | +20V, -25V | 3240 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TK4P60D,RQPB-F POWER MOSFET TRANSISTOR DP( Toshiba Semiconductor and Storage |
920 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 100W (Tc) | 150°C | - | - | Surface Mount | DPAK |
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TPN6R303NC,LQMOSFET N CH 30V 20A 8TSON-ADV Toshiba Semiconductor and Storage |
2,980 | - |
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数据手册 |
U-MOSVIII | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 6.3mOhm @ 10A, 10V | 2.3V @ 200µA | 24 nC @ 10 V | ±20V | 1370 pF @ 15 V | - | 700mW (Ta), 19W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPH8R808QM,LQ80V UMOS9-H SOP-ADVANCE(N) 8.8MO Toshiba Semiconductor and Storage |
9,829 | - |
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数据手册 |
U-MOSX-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 79A (Ta), 52A (Tc) | 6V, 10V | 8.8mOhm @ 26A, 10V | 3.5V @ 300µA | 26 nC @ 10 V | ±20V | 1750 pF @ 40 V | - | 3W (Ta), 109W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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TPN6R003NL,LQMOSFET N CH 30V 27A 8TSON-ADV Toshiba Semiconductor and Storage |
2,745 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Tc) | 4.5V, 10V | 6mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 700mW (Ta), 32W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
