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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SSM6J825R,LFP-CH MOSFET -30V, -20/+10V, -4A Toshiba Semiconductor and Storage |
5,947 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4V, 10V | 45mOhm @ 4A, 10V | 2V @ 250µA | 6.2 nC @ 4.5 V | +10V, -20V | 492 pF @ 10 V | - | 1.5W (Ta) | 150°C | - | - | Surface Mount | 6-TSOP-F |
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SSM6J207FE,LFMOSFET P-CH 30V 1.4A ES6 Toshiba Semiconductor and Storage |
3,375 | - |
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数据手册 |
U-MOSII | SOT-563, SOT-666 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4V, 10V | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | - | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | 150°C (TJ) | - | - | Surface Mount | ES6 |
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SSM6J401TU,LFMOSFET P-CH 30V 2.5A UF6 Toshiba Semiconductor and Storage |
2,620 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 73mOhm @ 2A, 10V | 2.6V @ 1mA | 16 nC @ 10 V | ±20V | 730 pF @ 15 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
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SSM6K824R,LFN-CH MOSFET 20V, +/-8V, 6A ,0.03 Toshiba Semiconductor and Storage |
5,940 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | ±8V | 410 pF @ 10 V | - | 1.5W (Ta) | 150°C | - | - | Surface Mount | 6-TSOP-F |
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SSM6K208FE,LFMOSFET N-CH 30V 1.9A ES6 Toshiba Semiconductor and Storage |
3,980 | - |
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数据手册 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | ES6 |
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SSM6K204FE,LFMOSFET N-CH 20V 2A ES6 Toshiba Semiconductor and Storage |
4,000 | - |
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数据手册 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4V | 126mOhm @ 1A, 4V | 1V @ 1mA | 3.4 nC @ 10 V | ±10V | 195 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | ES6 |
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SSM3H137TU,LFMOSFET N-CH 34V 2A UFM Toshiba Semiconductor and Storage |
2,500 | - |
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数据手册 |
U-MOSIV | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 34 V | 2A (Ta) | 4V, 10V | 240mOhm @ 1A, 10V | 1.7V @ 1mA | 3 nC @ 10 V | ±20V | 119 pF @ 10 V | - | 800mW (Ta) | 150°C | - | - | Surface Mount | UFM |
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SSM6K810R,LFSMALL SIGNAL MOSFET N-CH VDSS=10 Toshiba Semiconductor and Storage |
5,744 | - |
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数据手册 |
U-MOSVIII-H | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.5W (Ta) | 175°C | - | - | Surface Mount | 6-TSOP-F |
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SSM6K809R,LFSMALL SIGNAL MOSFET N-CH VDSS=60 Toshiba Semiconductor and Storage |
3,272 | - |
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数据手册 |
U-MOSVIII-H | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.5W (Ta) | 175°C | - | - | Surface Mount | 6-TSOP-F |
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TPC8129,LQ(SMOSFET P-CH 30V 9A 8SOP Toshiba Semiconductor and Storage |
4,634 | - |
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数据手册 |
U-MOSVI | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 22mOhm @ 4.5A, 10V | 2V @ 200µA | 39 nC @ 10 V | +20V, -25V | 1650 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
