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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TW083N65C,S1FG3 650V SIC-MOSFET TO-247 83MOH Toshiba Semiconductor and Storage |
142 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 113mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | - | - | Through Hole | TO-247 |
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SSM3K16FS,LFSMALL LOW ON RESISTANCE NCH MOSF Toshiba Semiconductor and Storage |
2,077 | - |
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数据手册 |
- | SC-75, SOT-416 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3 pF @ 3 V | - | 100mW (Ta) | 150°C | - | - | Surface Mount | SSM |
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SSM3K16CTC,L3FMOSFET N-CH 20V 200MA CST3C Toshiba Semiconductor and Storage |
8,505 | - |
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数据手册 |
- | SC-101, SOT-883 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | CST3C |
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SSM3J16FU(TE85L,F)SMALL LOW RON PCH MOSFETS VDSS:- Toshiba Semiconductor and Storage |
2,970 | - |
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数据手册 |
- | SC-70, SOT-323 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 11 pF @ 3 V | - | 150mW (Ta) | 150°C | - | - | Surface Mount | USM |
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SSM5N15FU,LFMOSFET N-CH 30V 100MA USV Toshiba Semiconductor and Storage |
2,122 | - |
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数据手册 |
π-MOSVI | 5-TSSOP, SC-70-5, SOT-353 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | - | - | ±20V | 7.8 pF @ 3 V | - | 200mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 5-SSOP |
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SSM5N15FE(TE85L,F)MOSFET N-CH 30V 100MA ESV Toshiba Semiconductor and Storage |
2,105 | - |
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数据手册 |
π-MOSVI | SOT-553 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8 pF @ 3 V | - | 150mW (Ta) | 150°C (TJ) | - | - | Surface Mount | ESV |
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SSM3J112TU,LFMOSFET P-CH 30V 1.1A UFM Toshiba Semiconductor and Storage |
8,968 | - |
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数据手册 |
- | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4V, 10V | 390mOhm @ 500mA, 10V | 1.8V @ 100µA | - | ±20V | 86 pF @ 15 V | - | 800mW (Ta) | 150°C | - | - | Surface Mount | UFM |
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SSM3J118TU,LFPB-F SMALL LOW ON RESISTANCE PCH Toshiba Semiconductor and Storage |
2,194 | - |
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数据手册 |
- | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | 2.6V @ 1mA | - | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UFM |
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SSM6K405TU,LFMOSFET N-CH 20V 2A UF6 Toshiba Semiconductor and Storage |
2,480 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4V | 126mOhm @ 1A, 4V | 1V @ 1mA | 3.4 nC @ 4 V | ±10V | 195 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
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SSM3J144TU,LFMOSFET P-CH 20V 3.2A UFM Toshiba Semiconductor and Storage |
2,990 | - |
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数据手册 |
U-MOSVI | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | +6V, -8V | 290 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UFM |
