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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TW015N120C,S1FG3 1200V SIC-MOSFET TO-247 15MO Toshiba Semiconductor and Storage |
2,793 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 20mOhm @ 50A, 18V | 5V @ 11.7mA | 158 nC @ 18 V | +25V, -10V | 6000 pF @ 800 V | - | 431W (Tc) | 175°C | - | - | Through Hole | TO-247 |
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SSM3K37CT,L3FMOSFET N-CH 20V 200MA CST3 Toshiba Semiconductor and Storage |
8,794 | - |
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数据手册 |
U-MOSIII | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12 pF @ 10 V | - | 100mW (Ta) | 150°C (TJ) | - | - | Surface Mount | CST3 |
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SSM3K35CT,L3FMOSFET N-CH 20V 180MA CST3 Toshiba Semiconductor and Storage |
32,987 | - |
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数据手册 |
- | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 9.5 pF @ 3 V | - | 100mW (Ta) | 150°C | - | - | Surface Mount | CST3 |
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SSM3J35CT,L3FMOSFET P-CHANNEL 20V 100MA CST3 Toshiba Semiconductor and Storage |
6,186 | - |
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数据手册 |
π-MOSVI | SC-101, SOT-883 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 100mA (Ta) | 1.2V, 4V | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 12.2 pF @ 3 V | - | 100mW (Ta) | 150°C | - | - | Surface Mount | CST3 |
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SSM3K7002KF,LXHFSMOS NCH I: 0.4A, V: 60V, P: 270 Toshiba Semiconductor and Storage |
17,109 | - |
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数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 270mW (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | S-Mini |
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SSM3J145TU,LFMOSFET P-CH 20V 3A UFM Toshiba Semiconductor and Storage |
9,968 | - |
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数据手册 |
U-MOSVI | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 270 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UFM |
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SSM6J50TU,LFMOSFET P-CH 20V 2.5A UF6 Toshiba Semiconductor and Storage |
5,998 | - |
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数据手册 |
U-MOSIV | 6-SMD, Flat Leads | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 2V, 4.5V | 64mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | - | ±10V | 800 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
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SSM3J371R,LXHFSMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage |
12,597 | - |
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数据手册 |
U-MOSVI | SOT-23-3 Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | +6V, -8V | 630 pF @ 10 V | - | 1W (Ta) | 150°C | Automotive | AEC-Q101 | Surface Mount | SOT-23F |
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SSM6J402TU,LFMOSFET P-CH 30V 2A UF6 Toshiba Semiconductor and Storage |
6,176 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | 2.6V @ 1mA | 5.3 nC @ 10 V | ±20V | 280 pF @ 15 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
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SSM6K407TU,LFMOSFET N-CH 60V 2A UF6 Toshiba Semiconductor and Storage |
2,926 | - |
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数据手册 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6 nC @ 10 V | ±20V | 150 pF @ 10 V | - | 500mW (Ta) | 150°C | - | - | Surface Mount | UF6 |
