电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPH8R008NH,L1QMOSFET N-CH 80V 34A 8SOP Toshiba Semiconductor and Storage |
8,924 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 34A (Tc) | 10V | 8mOhm @ 17A, 10V | 4V @ 500µA | 35 nC @ 10 V | ±20V | 3000 pF @ 40 V | - | 1.6W (Ta), 61W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
TPH5R906NH,L1QMOSFET N-CH 60V 28A 8SOP Toshiba Semiconductor and Storage |
24,969 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta) | 10V | 5.9mOhm @ 14A, 10V | 4V @ 300µA | 38 nC @ 10 V | ±20V | 3100 pF @ 30 V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
TK290P60Y,RQMOSFET N-CH 600V 11.5A DPAK Toshiba Semiconductor and Storage |
3,958 | - |
|
数据手册 |
DTMOSV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
|
XPH3R206NC,L1XHQMOSFET N-CH 60V 70A 8SOP Toshiba Semiconductor and Storage |
14,955 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 3.2mOhm @ 35A, 10V | 2.5V @ 500µA | 65 nC @ 10 V | ±20V | 4180 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | 8-SOP Advance (5x5) |
|
|
TPH8R80ANH,L1QMOSFET N CH 100V 32A 8-SOP Toshiba Semiconductor and Storage |
29,285 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 10V | 8.8mOhm @ 16A, 10V | 4V @ 500µA | 33 nC @ 10 V | ±20V | 2800 pF @ 50 V | - | 1.6W (Ta), 61W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
|
XPH6R30ANB,L1XHQMOSFET N-CH 100V 45A 8SOP Toshiba Semiconductor and Storage |
8,918 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
TK10A50W,S5XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
118 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
|
TK1R4S04PB,LXHQMOSFET N-CH 40V 120A DPAK Toshiba Semiconductor and Storage |
4,738 | - |
|
数据手册 |
U-MOSIX-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 1.9mOhm @ 60A, 6V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 180W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
|
|
TK290P65Y,RQMOSFET N-CH 650V 11.5A DPAK Toshiba Semiconductor and Storage |
3,976 | - |
|
数据手册 |
DTMOSV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
|
XPW6R30ANB,L1XHQMOSFET N-CH 100V 45A 8DSOP Toshiba Semiconductor and Storage |
5,290 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | 175°C | - | - | Surface Mount | 8-DSOP Advance |
