电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TK4R3E06PL,S1XMOSFET N-CH 60V 80A TO220 Toshiba Semiconductor and Storage |
109 | - |
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数据手册 |
U-MOSIX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 87W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220 |
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TPH4R50ANH1,LQMOSFET 100V 4.5MOHM SOP-ADV(N) Toshiba Semiconductor and Storage |
6,077 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 92A (Tc) | 10V | 4.5mOhm @ 46A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 800mW (Ta) | 150°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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TPH2010FNH,L1QMOSFET N-CH 250V 5.6A 8SOP Toshiba Semiconductor and Storage |
8,813 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 100 V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK15S04N1L,LQMOSFET N-CH 40V 15A DPAK Toshiba Semiconductor and Storage |
1,595 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK380P60Y,RQMOSFET N-CHANNEL 600V 9.7A DPAK Toshiba Semiconductor and Storage |
4,000 | - |
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数据手册 |
DTMOSV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK90S06N1L,LXHQMOSFET N-CH 60V 90A DPAK Toshiba Semiconductor and Storage |
9,310 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Ta) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2.5V @ 500µA | 81 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 157W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TPHR9203PL1,LQUMOS9 SOP-ADV(N) PD=170W F=1MHZ Toshiba Semiconductor and Storage |
6,098 | - |
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数据手册 |
U-MOSIX-H | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 0.92mOhm @ 50A, 10V | 2.1V @ 500µA | 81 nC @ 10 V | ±20V | 7540 pF @ 15 V | - | 960mW (Ta), 170W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5.75) |
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TK33S10N1Z,LQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
977 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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TK60S10N1L,LXHQMOSFET N-CH 100V 60A DPAK Toshiba Semiconductor and Storage |
3,764 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 180W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TK8P60W5,RVQMOSFET N-CH 600V 8A DPAK Toshiba Semiconductor and Storage |
4,072 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Ta) | 10V | 560mOhm @ 4A, 10V | 4.5V @ 400µA | 22 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
