| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK11S10N1L,LXHQMOSFET N-CH 100V 11A DPAK Toshiba Semiconductor and Storage |
3,837 | - |
|
数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta) | 4.5V, 10V | 28mOhm @ 5.5A, 10V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 850 pF @ 10 V | - | 65W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
|
TPH3R704PC,LQMOSFET N-CH 40V 82A 8SOP Toshiba Semiconductor and Storage |
1,635 | - |
|
数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 4.5V, 10V | 3.7mOhm @ 41A, 10V | 2.4V @ 300µA | 47 nC @ 10 V | ±20V | 3615 pF @ 20 V | - | 830mW (Ta), 90W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
TPN7R506NH,L1QMOSFET N-CH 60V 26A 8TSON Toshiba Semiconductor and Storage |
11,620 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Tc) | 6.5V, 10V | 7.5mOhm @ 13A, 10V | 4V @ 200µA | 22 nC @ 10 V | ±20V | 1800 pF @ 30 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
|
TPN13008NH,L1QMOSFET N-CH 80V 18A 8TSON Toshiba Semiconductor and Storage |
4,415 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 18A (Tc) | 10V | 13.3mOhm @ 9A, 10V | 4V @ 200µA | 18 nC @ 10 V | ±20V | 1600 pF @ 40 V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
|
TK40S06N1L,LXHQMOSFET N-CH 60V 40A DPAK Toshiba Semiconductor and Storage |
6,970 | - |
|
数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
|
TPH4R003NL,L1QMOSFET N-CH 30V 40A 8SOP Toshiba Semiconductor and Storage |
4,086 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 1.6W (Ta), 36W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
TPH14006NH,L1QMOSFET N CH 60V 14A 8-SOP ADV Toshiba Semiconductor and Storage |
4,380 | - |
|
数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 6.5V, 10V | 14mOhm @ 7A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1300 pF @ 30 V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
TPH2R104PL,LQMOSFET N-CH 40V 100A 8SOP Toshiba Semiconductor and Storage |
11,371 | - |
|
数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 50A, 10V | 2.4V @ 500µA | 78 nC @ 10 V | ±20V | 6230 pF @ 20 V | - | 830mW (Ta), 116W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
|
XPN12006NC,L1XHQMOSFET N-CH 60V 20A 8TSON Toshiba Semiconductor and Storage |
9,542 | - |
|
数据手册 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 65W (Tc) | -55°C ~ 175°C | Automotive | AEC-Q101 | Surface Mount | 8-TSON Advance-WF (3.1x3.1) |
|
TK65S04N1L,LXHQMOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage |
4,642 | - |
|
数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 65A (Ta) | 4.5V, 10V | 4.3mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39 nC @ 10 V | ±20V | 2550 pF @ 10 V | - | 107W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |

