电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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XPN7R104NC,L1XHQMOSFET N-CH 40V 20A 8TSON Toshiba Semiconductor and Storage |
11,107 | - |
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数据手册 |
U-MOSIII | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 4.5V, 10V | 7.1mOhm @ 10A, 10V | 2.5V @ 200µA | 21 nC @ 10 V | ±20V | 1290 pF @ 10 V | - | 840mW (Ta), 65W (Tc) | 175°C | - | - | Surface Mount | 8-TSON Advance-WF (3.1x3.1) |
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XPN3R804NC,L1XHQMOSFET N-CH 40V 40A 8TSON Toshiba Semiconductor and Storage |
14,885 | - |
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数据手册 |
U-MOSVIII | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2230 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | 175°C | - | - | Surface Mount | 8-TSON Advance-WF (3.1x3.1) |
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TK33S10N1L,LXHQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
3,536 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TPN5900CNH,L1QMOSFET N-CH 150V 9A 8TSON Toshiba Semiconductor and Storage |
4,036 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TK560P65Y,RQMOSFET N-CHANNEL 650V 7A DPAK Toshiba Semiconductor and Storage |
3,844 | - |
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数据手册 |
DTMOSV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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XPN6R706NC,L1XHQMOSFET N-CH 60V 40A 8TSON Toshiba Semiconductor and Storage |
27,960 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | 175°C | - | - | Surface Mount | 8-TSON Advance-WF (3.1x3.1) |
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TK5R1P08QM,RQUMOS10 DPAK 80V 5.1MOHM Toshiba Semiconductor and Storage |
15,659 | - |
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数据手册 |
U-MOSX-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 84A (Tc) | 6V, 10V | 5.1mOhm @ 42A, 10V | 3.5V @ 700µA | 56 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 104W (Tc) | 175°C | - | - | Surface Mount | DPAK |
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TK560P60Y,RQMOSFET N-CHANNEL 600V 7A DPAK Toshiba Semiconductor and Storage |
5,542 | - |
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数据手册 |
DTMOSV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TPH7R506NH,L1QMOSFET N-CH 60V 22A 8SOP Toshiba Semiconductor and Storage |
25,501 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 22A (Ta) | 10V | 7.5mOhm @ 11A, 10V | 4V @ 300µA | 31 nC @ 10 V | ±20V | 2320 pF @ 30 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK7S10N1Z,LQMOSFET N-CH 100V 7A DPAK Toshiba Semiconductor and Storage |
6,884 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 10V | 48mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1 nC @ 10 V | ±20V | 470 pF @ 10 V | - | 50W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
