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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TPN2R903PL,L1QMOSFET N-CH 30V 70A 8TSON Toshiba Semiconductor and Storage |
36,136 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 35A, 10V | 2.1V @ 200µA | 26 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 630mW (Ta), 75W (Tc) | 175°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPH8R903NL,LQMOSFET N CH 30V 20A 8SOP Toshiba Semiconductor and Storage |
3,150 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 1mA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1.6W (Ta), 24W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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SSM10N954L,EFFCOMMON-DRAIN NCH MOSFET, 12V, 13 Toshiba Semiconductor and Storage |
9,865 | - |
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数据手册 |
- | 10-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 13.5A (Ta) | 2.5V, 4.5V | 2.75mOhm @ 6A, 4.5V | 1.4V @ 1.11mA | 25 nC @ 4 V | ±8V | - | - | 800mW (Ta) | 150°C | - | - | Surface Mount | TCSPAC-153001 |
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2SJ168TE85LFMOSFET P-CH 60V 200MA SC59 Toshiba Semiconductor and Storage |
12,605 | - |
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数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 2Ohm @ 50mA, 10V | - | - | ±20V | 85 pF @ 10 V | - | 200mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SC-59 |
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TPN11006NL,LQMOSFET N-CH 60V 17A 8TSON Toshiba Semiconductor and Storage |
13,285 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPN22006NH,LQMOSFET N-CH 60V 9A 8TSON Toshiba Semiconductor and Storage |
5,752 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 6.5V, 10V | 22mOhm @ 4.5A, 10V | 4V @ 100µA | 12 nC @ 10 V | ±20V | 710 pF @ 30 V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TJ10S04M3L,LXHQMOSFET P-CH 40V 10A DPAK Toshiba Semiconductor and Storage |
3,780 | - |
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数据手册 |
U-MOSVI | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TK15S04N1L,LXHQMOSFET N-CH 40V 15A DPAK Toshiba Semiconductor and Storage |
1,922 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TPN7R006PL,L1QMOSFET N-CH 60V 54A 8TSON Toshiba Semiconductor and Storage |
9,946 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 54A (Tc) | 4.5V, 10V | 7mOhm @ 27A, 10V | 2.5V @ 200µA | 20 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 630mW (Ta), 75W (Tc) | 175°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPN3300ANH,LQMOSFET N-CH 100V 9.4A 8TSON Toshiba Semiconductor and Storage |
7,306 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Tc) | 10V | 33mOhm @ 4.7A, 10V | 4V @ 100µA | 11 nC @ 10 V | ±20V | 880 pF @ 50 V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
