电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TPH3R203NL,L1QMOSFET N-CH 30V 47A 8SOP Toshiba Semiconductor and Storage |
4,990 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 47A (Tc) | 4.5V, 10V | 3.2mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21 nC @ 10 V | ±20V | 2100 pF @ 15 V | - | 1.6W (Ta), 44W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK6P65W,RQMOSFET N-CH 650V 5.8A DPAK Toshiba Semiconductor and Storage |
2,008 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK33S10N1Z,LXHQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
3,964 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TPH1R204PL,L1QMOSFET N-CH 40V 150A 8SOP Toshiba Semiconductor and Storage |
4,414 | - |
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数据手册 |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 1.24mOhm @ 50A, 10V | 2.4V @ 500µA | 74 nC @ 10 V | ±20V | 7200 pF @ 20 V | - | 960mW (Ta), 132W (Tc) | 175°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TJ80S04M3L,LXHQMOSFET P-CH 40V 80A DPAK Toshiba Semiconductor and Storage |
5,473 | - |
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数据手册 |
U-MOSVI | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TK55S10N1,LXHQMOSFET N-CH 100V 55A DPAK Toshiba Semiconductor and Storage |
8,842 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3280 pF @ 10 V | - | 157W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
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TK7P65W,RQMOSFET N-CH 650V 6.8A DPAK Toshiba Semiconductor and Storage |
908 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.8A (Ta) | 10V | 800mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK65S04N1L,LQMOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage |
3,964 | - |
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数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 65A (Ta) | 10V | 4.3mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39 nC @ 10 V | ±20V | 2550 pF @ 10 V | - | 107W (Tc) | 175°C (TJ) | - | - | Surface Mount | DPAK+ |
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XPH4R10ANB,L1XHQMOSFET N-CH 100V 70A 8SOP Toshiba Semiconductor and Storage |
34,035 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Ta) | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK60F10N1L,LXGQMOSFET N-CH 100V 60A TO220SM Toshiba Semiconductor and Storage |
1,750 | - |
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数据手册 |
U-MOSVIII-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 205W (Tc) | 175°C | - | - | Surface Mount | TO-220SM(W) |
