电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TK6Q60W,S1VQMOSFET N-CH 600V 6.2A IPAK Toshiba Semiconductor and Storage |
183 | - |
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数据手册 |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK6P60W,RVQMOSFET N CH 600V 6.2A DPAK Toshiba Semiconductor and Storage |
645 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK11P65W,RQMOSFET N-CH 650V 11.1A DPAK Toshiba Semiconductor and Storage |
462 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.1A (Ta) | 10V | 440mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TPH4R606NH,L1QMOSFET N-CH 60V 32A 8SOP Toshiba Semiconductor and Storage |
4,625 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 32A (Ta) | 6.5V, 10V | 4.6mOhm @ 16A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3965 pF @ 30 V | - | 1.6W (Ta), 63W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK7P60W,RVQMOSFET N CH 600V 7A DPAK Toshiba Semiconductor and Storage |
1,988 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Ta) | 10V | 600mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 60W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK12P60W,RVQMOSFET N CH 600V 11.5A DPAK Toshiba Semiconductor and Storage |
1,930 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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XPJ1R004PB,LXHQ40V; UMOS9; MOSFET 1MOHM; L-TOGL Toshiba Semiconductor and Storage |
2,975 | - |
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数据手册 |
- | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 6V, 10V | 1mOhm @ 80A, 10V | 3V @ 500µA | 84 nC @ 10 V | ±20V | 6890 pF @ 10 V | - | 223W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | S-TOGL™ |
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TPW2R508NH,L1QPB-F POWER MOSFET TRANSISTOR DOS Toshiba Semiconductor and Storage |
10,902 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 150A (Ta) | 10V | 2.5mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 800mW (Ta), 142W (Tc) | 150°C | - | - | Surface Mount | 8-DSOP Advance |
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TPW1500CNH,L1QPB-F POWER MOSFET TRANSISTOR DSO Toshiba Semiconductor and Storage |
6,746 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 800mW (Ta), 142W (Tc) | 150°C | - | - | Surface Mount | 8-DSOP Advance |
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TK9R7A15Q5,S4X150V UMOS10-HSD TO-220SIS 9.7MOH Toshiba Semiconductor and Storage |
388 | - |
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数据手册 |
U-MOSX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 49A (Tc) | 8V, 10V | 9.7mOhm @ 24.5A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±20V | 3690 pF @ 75 V | - | 45W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
