电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK3564(STA4,Q,M)MOSFET N-CH 900V 3A TO220SIS Toshiba Semiconductor and Storage |
3,840 | - |
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数据手册 |
π-MOSIV | TO-220-3 Full Pack | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 900 V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 17 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK8A50D(STA4,Q,M)MOSFET N-CH 500V 8A TO220SIS Toshiba Semiconductor and Storage |
3,423 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Ta) | 10V | 850mOhm @ 4A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPH2R306NH,L1QMOSFET N-CH 60V 60A 8SOP Toshiba Semiconductor and Storage |
1,493 | - |
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数据手册 |
U-MOSVIII-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 6.5V, 10V | 2.3mOhm @ 30A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6100 pF @ 30 V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK12A50D(STA4,Q,M)MOSFET N-CH 500V 12A TO220SIS Toshiba Semiconductor and Storage |
3,884 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK15A50D(STA4,Q,M)MOSFET N-CH 500V 15A TO220SIS Toshiba Semiconductor and Storage |
3,427 | - |
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数据手册 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK100E08N1,S1XMOSFET N-CH 80V 100A TO220 Toshiba Semiconductor and Storage |
2,462 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Ta) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 9000 pF @ 40 V | - | 255W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK040N65Z,S1FMOSFET N-CH 650V 57A TO247 Toshiba Semiconductor and Storage |
2,949 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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TW140N120C,S1FG3 1200V SIC-MOSFET TO-247 140M Toshiba Semiconductor and Storage |
2,099 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 18V | 182mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | 175°C | - | - | Through Hole | TO-247 |
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TK042N65Z5,S1F(S650V DTMOS6 HSD 42MOHM TO-247 Toshiba Semiconductor and Storage |
3,753 | - |
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数据手册 |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 55A (Ta) | 10V | 42mOhm @ 27.5A, 10V | 4.5V @ 2.85mA | 105 nC @ 10 V | ±30V | 6280 pF @ 300 V | - | 360W (Tc) | 150°C | - | - | Through Hole | TO-247 |
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TW045Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 4 Toshiba Semiconductor and Storage |
4,226 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 62mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
