电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK32A12N1,S4XMOSFET N-CH 120V 32A TO220SIS Toshiba Semiconductor and Storage |
3,872 | - |
|
数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34 nC @ 10 V | ±20V | 2000 pF @ 60 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
TK7R4A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
100 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 7.4mOhm @ 25A, 10V | 2.5V @ 500µA | 44 nC @ 10 V | ±20V | 2800 pF @ 50 V | - | 42W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
|
TK22E10N1,S1XMOSFET N CH 100V 52A TO220 Toshiba Semiconductor and Storage |
4,137 | - |
|
数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 72W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TK6R7A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,537 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 4.5V, 10V | 6.7mOhm @ 28A, 10V | 2.5V @ 500µA | 58 nC @ 10 V | ±20V | 3455 pF @ 50 V | - | 42W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
|
|
TK7A90E,S4XMOSFET N-CH 900V 7A TO220SIS Toshiba Semiconductor and Storage |
3,486 | - |
|
数据手册 |
π-MOSVIII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
|
TK3R2E06PL,S1XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
3,310 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2.5V @ 700µA | 71 nC @ 10 V | ±20V | 5000 pF @ 30 V | - | 168W (Tc) | 175°C | - | - | Through Hole | TO-220 |
|
|
TK40A10N1,S4XMOSFET N-CH 100V 40A TO220SIS Toshiba Semiconductor and Storage |
1,690 | - |
|
数据手册 |
U-MOSVIII-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
TK33S10N1L,LQMOSFET N-CH 100V 33A DPAK Toshiba Semiconductor and Storage |
4,782 | - |
|
数据手册 |
U-MOSVIII-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | 175°C | - | - | Surface Mount | DPAK+ |
|
|
TK4R1A10PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
1,204 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 4.1mOhm @ 40A, 10V | 2.5V @ 1mA | 104 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 54W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
|
|
TK10A60W5,S5VXMOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage |
3,740 | - |
|
数据手册 |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
