电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TW045N120C,S1FG3 1200V SIC-MOSFET TO-247 45MO Toshiba Semiconductor and Storage |
2,378 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 59mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | - | - | Through Hole | TO-247 |
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SSM6G18NU,LFMOSFET P-CH 20V 2A 6UDFN Toshiba Semiconductor and Storage |
785 | - |
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数据手册 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 112mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-µDFN (2x2) |
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SSM6J503NU,LFMOSFET P-CH 20V 6A 6UDFNB Toshiba Semiconductor and Storage |
820 | - |
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数据手册 |
U-MOSVI | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 32.4mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 10 V | ±8V | 840 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-UDFNB (2x2) |
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SSM6J216FE,LFMOSFET P-CHANNEL 12V 4.8A ES6 Toshiba Semiconductor and Storage |
379 | - |
|
数据手册 |
U-MOSVI | SOT-563, SOT-666 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 32mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | ±8V | 1040 pF @ 12 V | - | 700mW (Ta) | 150°C | - | - | Surface Mount | ES6 |
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TK30E06N1,S1XMOSFET N-CH 60V 43A TO220 Toshiba Semiconductor and Storage |
2,417 | - |
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数据手册 |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Ta) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 53W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK1K0A60F,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
4,200 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 3.8A, 10V | 4V @ 770µA | 24 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 40W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK3R1A04PL,S4XMOSFET N-CH 40V 82A TO220SIS Toshiba Semiconductor and Storage |
3,613 | - |
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数据手册 |
U-MOSIX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4 nC @ 10 V | ±20V | 4670 pF @ 20 V | - | 36W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5R3A06PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
3,909 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 4.5V, 10V | 5.3mOhm @ 28A, 10V | 2.5V @ 300µA | 36 nC @ 10 V | ±20V | 2380 pF @ 30 V | - | 36W (Tc) | 175°C | - | - | Through Hole | TO-220SIS |
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TK4R3A06PL,S4XMOSFET N-CH 60V 68A TO220SIS Toshiba Semiconductor and Storage |
2,989 | - |
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数据手册 |
U-MOSIX-H | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 68A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 36W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK650A60F,S4XMOSFET N-CH 600V 11A TO220SIS Toshiba Semiconductor and Storage |
3,633 | - |
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数据手册 |
U-MOSIX | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34 nC @ 10 V | ±30V | 1320 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
