电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ71N-CHANNEL POWER MOSFET Harris Corporation |
14,750 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 14A (Tc) | 10V | 100mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 650 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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RFD10N05SM10A, 50V, N-CHANNEL, Harris Corporation |
11,858 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252 (DPAK) |
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RFP2N15N-CHANNEL, MOSFET Harris Corporation |
2,411 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 2A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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RFP50N06R403450A, 60V, 0.022 OHM, N-CHANNEL Harris Corporation |
2,400 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFD113MOSFET N-CH 60V 800MA 4DIP Harris Corporation |
46,955 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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RF1S25N06SM9AN-CHANNEL POWER MOSFET Harris Corporation |
4,000 | - |
|
数据手册 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP45N06LEN-CHANNEL POWER MOSFET Harris Corporation |
1,569 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 5V | 28mOhm @ 45A, 5V | 2V @ 250µA | 135 nC @ 10 V | ±10V | 2150 pF @ 25 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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RF1S23N06LE23A, 60V, 0.065OHM, N-CHANNEL, Harris Corporation |
2,400 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A (Tc) | 5V | 65mOhm @ 23A, 5V | 2V @ 250µA | 48 nC @ 10 V | ±10V | 850 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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RFP45N03LN-CHANNEL POWER MOSFET Harris Corporation |
41,855 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 5V | 22mOhm @ 45A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1650 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRF9532P-CHANNEL POWER MOSFET Harris Corporation |
19,101 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
