电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFD20N03SM9AN-CHANNEL POWER MOSFET Harris Corporation |
4,911 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 25mOhm @ 20A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1150 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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IRFD123MOSFET N-CH 100V 1.3A 4DIP Harris Corporation |
40,339 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.3A (Ta) | - | 270mOhm @ 780mA, 10V | 4V @ 250µA | 16 nC @ 10 V | - | 360 pF @ 25 V | - | - | - | - | - | Through Hole | 4-HVMDIP |
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IRFU2204.6A 200V 0.800 OHM N-CHANNEL Harris Corporation |
13,111 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | - | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | - | 260 pF @ 25 V | - | - | - | - | - | Through Hole | TO-251AA |
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IRF643N-CHANNEL POWER MOSFET Harris Corporation |
3,050 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 16A (Tc) | 10V | 220mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RFP8N18LN-CHANNEL POWER MOSFET Harris Corporation |
2,390 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 180 V | 8A (Tc) | 5V | 500mOhm @ 4A, 5V | 2V @ 1mA | - | ±10V | 900 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RFP10N15LN-CHANNEL POWER MOSFET Harris Corporation |
20,421 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 5V | 300mOhm @ 5A, 5V | - | - | ±10V | 1200 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRF642N-CHANNEL POWER MOSFET Harris Corporation |
6,085 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 220mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RF1S22N10N-CHANNEL POWER MOSFET Harris Corporation |
1,990 | - |
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数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF122N-CHANNEL POWER MOSFET Harris Corporation |
1,790 | - |
|
数据手册 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3 |
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HUF75332P3MOSFET N-CH 55V 60A TO220-3 Harris Corporation |
4,863 | - |
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数据手册 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 60A (Tc) | 10V | 19mOhm @ 60A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
