电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RF1S50N06LESMN-CHANNEL POWER MOSFET Harris Corporation |
1,705 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 5V | 22mOhm @ 50A, 5V | 2V @ 250µA | 120 nC @ 10 V | ±10V | 2100 pF @ 25 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
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RFD16N05MOSFET N-CH 50V 16A IPAK Harris Corporation |
7,050 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | 4V @ 250µA | 80 nC @ 20 V | ±20V | 900 pF @ 25 V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IRFD311N-CHANNEL POWER MOSFET Harris Corporation |
1,332 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 400mA (Tc) | 10V | 3.6Ohm @ 200mA, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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RF1S530N-CHANNEL POWER MOSFET Harris Corporation |
1,190 | - |
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数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF841N-CHANNEL POWER MOSFET Harris Corporation |
800 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 8A (Tc) | 10V | 850mOhm @ 4.4A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1225 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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HUF75344S375A, 55V, 0.008 OHM, N-CHANNEL U Harris Corporation |
678 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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IRF741N-CHANNEL POWER MOSFET Harris Corporation |
520 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 10A (Tc) | 10V | 550mOhm @ 5.2A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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IRFF232N-CHANNEL POWER MOSFET Harris Corporation |
341 | - |
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数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.5A (Tc) | - | - | - | - | - | - | - | 25W | - | - | - | Through Hole | TO-205AF (TO-39) |
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RF1S50N0650A, 60V, 0.022 OHM, N-CHANNEL Harris Corporation |
2,746 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250µA | 150 nC @ 20 V | ±20V | 2020 pF @ 25 V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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RF1S630SMN-CHANNEL POWER MOSFET Harris Corporation |
2,098 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 6A (Tc) | 10V | 400mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
