电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFD16N03LSMN-CHANNEL POWER MOSFET Harris Corporation |
1,964 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252 (DPAK) |
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RFP15N12N-CHANNEL POWER MOSFET Harris Corporation |
10,952 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 15A (Tc) | 10V | 150mOhm @ 7.5A, 10V | 4V @ 1mA | - | ±20V | 1700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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RF1S9630P-CHANNEL POWER MOSFET Harris Corporation |
2,400 | - |
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数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP12N18N-CHANNEL POWER MOSFET Harris Corporation |
1,550 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 180 V | 12A (Tc) | 10V | 250mOhm @ 12A, 10V | 4V @ 250µA | - | ±20V | 1700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRFF223N-CHANNEL POWER MOSFET Harris Corporation |
1,395 | - |
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数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 3A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
|
IRFF211N-CHANNEL POWER MOSFET Harris Corporation |
1,043 | - |
|
数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 2.2A (Tc) | 10V | 1.5Ohm @ 1.25A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
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IRFF221N-CHANNEL POWER MOSFET Harris Corporation |
390 | - |
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数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.5A (Tc) | 10V | 800mOhm @ 2A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
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RFP10P12P-CHANNEL POWER MOSFET Harris Corporation |
300 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Tc) | 10V | 500mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 1700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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RFP10N12LN-CHANNEL POWER MOSFET Harris Corporation |
54,904 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Tc) | 5V | 300mOhm @ 5A, 5V | - | - | ±10V | 1200 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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RFP7N35N-CHANNEL POWER MOSFET Harris Corporation |
1,200 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 7A (Tc) | 10V | 750mOhm @ 3.5A, 10V | 4V @ 1mA | - | ±20V | 1600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
