电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ21MOSFET N-CH 100V 21A TO220AB Harris Corporation |
42,976 | - |
|
数据手册 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Tc) | - | 85mOhm @ 13A, 10V | 4V @ 1mA | - | - | 1300 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220AB |
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BUZ41AN-CHANNEL POWER MOSFET Harris Corporation |
6,850 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4V @ 1mA | - | ±20V | 2000 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RFP70N03MOSFET N-CH 30V 70A TO220-3 Harris Corporation |
5,567 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | - | 10mOhm @ 70A, 10V | 4V @ 250µA | 260 nC @ 20 V | - | 3300 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220-3 |
|
IRF731N-CHANNEL POWER MOSFET Harris Corporation |
3,759 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFP340MOSFET N-CH 400V 11A TO247-3 Harris Corporation |
1,024 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFP150MOSFET N-CH 100V 41A TO247-3 Harris Corporation |
12,541 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 41A (Tc) | 10V | 55mOhm @ 25A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFD323N-CHANNEL POWER MOSFET Harris Corporation |
982 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 400mA (Tc) | 10V | 2.5Ohm @ 250mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 455 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
|
RFG40N10N-CHANNEL POWER MOSFET Harris Corporation |
752 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 250µA | 300 nC @ 20 V | ±20V | - | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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IRF9632P-CHANNEL POWER MOSFET Harris Corporation |
455 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 1.2Ohm @ 3.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFP245N-CHANNEL POWER MOSFET Harris Corporation |
400 | - |
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数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 340mOhm @ 10A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
