电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFP6N50N-CHANNEL POWER MOSFET Harris Corporation |
1,793 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | - | ±20V | 1500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
IRF9541P-CHANNEL POWER MOSFET Harris Corporation |
4,731 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 19A (Tc) | 10V | 200mOhm @ 10A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
HUF76137S3SN-CHANNEL POWER MOSFET Harris Corporation |
197 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 9mOhm @ 75A, 10V | 3V @ 250µA | 72 nC @ 10 V | ±16V | 2100 pF @ 25 V | - | 145W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFD320MOSFET N-CH 400V 490MA 4HVMDIP Harris Corporation |
812 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 490mA (Ta) | - | 1.8Ohm @ 210mA, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
|
|
IRF9640S249711A, 200V, 0.500 OHM, P-CHANNEL Harris Corporation |
250 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRFP352N-CHANNEL POWER MOSFET Harris Corporation |
436 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 14A (Tc) | 10V | 400mOhm @ 8.9A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
IRF64414A, 250V, 0.28 OHM, N-CHANNEL Harris Corporation |
24,196 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRF120N-CHANNEL POWER MOSFET Harris Corporation |
152 | - |
|
数据手册 |
- | TO-204AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 300mOhm @ 4A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3 |
|
|
IRFP351N-CHANNEL POWER MOSFET Harris Corporation |
314 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 16A (Tc) | 10V | 300mOhm @ 8.9A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
IRFP251N-CHANNEL POWER MOSFET Harris Corporation |
265 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 85mOhm @ 17A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
