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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFL1N15N-CHANNEL POWER MOSFET Harris Corporation |
4,903 | - |
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数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Tc) | 10V | 1.9Ohm @ 1A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 8.33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
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RFP6N45N-CHANNEL POWER MOSFET Harris Corporation |
210 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 6A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | - | ±20V | 1500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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RFM6P10P-CHANNEL POWER MOSFET Harris Corporation |
3,064 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | - | ±20V | 800 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFD322N-CHANNEL POWER MOSFET Harris Corporation |
1,111 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 400mA (Tc) | 10V | 2.5Ohm @ 250mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 455 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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IRF641N-CHANNEL POWER MOSFET Harris Corporation |
8,800 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF9542P-CHANNEL POWER MOSFET Harris Corporation |
497 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 10V | 300mOhm @ 10A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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RFW2N06RLEN-CHANNEL POWER MOSFET Harris Corporation |
734 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Tc) | 5V | 200mOhm @ 2A, 5V | 2V @ 250µA | 30 nC @ 10 V | +10V, -5V | 535 pF @ 25 V | - | 1.09W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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RFL1N15LN-CHANNEL POWER MOSFET Harris Corporation |
1,396 | - |
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数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Tc) | 5V | 1.9Ohm @ 1A, 5V | 2V @ 250µA | - | ±10V | 200 pF @ 25 V | - | 8.33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
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RF1S9530-12A, -100V, 0.3 OHM, P-CHANNEL Harris Corporation |
5,418 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 300mOhm @ 6.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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IRFF9222P-CHANNEL POWER MOSFET Harris Corporation |
2,106 | - |
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数据手册 |
- | TO-205AF Metal Can | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 2A (Ta) | 10V | 2.4Ohm @ 1.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
