电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFD16N05LN-CHANNEL POWER MOSFET Harris Corporation |
31,022 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 16A (Tc) | 4V, 5V | 47mOhm @ 16A, 5V | 2V @ 250mA | 80 nC @ 10 V | ±10V | - | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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RF1S54028A, 100V, 0.077 OHM, N-CHANNEL Harris Corporation |
4,101 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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HUF76139S3N-CHANNEL POWER MOSFET Harris Corporation |
800 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 7.5mOhm @ 75A, 10V | 3V @ 250µA | 78 nC @ 10 V | ±16V | 2700 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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RFG40N10LEN-CHANNEL POWER MOSFET Harris Corporation |
489 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFF9122P-CHANNEL POWER MOSFET Harris Corporation |
422 | - |
|
数据手册 |
- | TO-205AF Metal Can | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.5A (Tc) | - | - | - | - | - | - | - | 20W | - | - | - | Through Hole | TO-205AF (TO-39) |
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RFP42N03LMOSFET N-CH 30V 42A TO220AB Harris Corporation |
63,600 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | - | 25mOhm @ 42A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1650 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF730N-CHANNEL, MOSFET Harris Corporation |
24,025 | - |
|
数据手册 |
PowerMESH™ II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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IRFD3100.4A 400V 3.600 OHM N-CHANNEL Harris Corporation |
3,189 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 350mA (Ta) | 10V | 3.6Ohm @ 210mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
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RF1S9640MOSFET P-CH 200V 11A TO220AB Harris Corporation |
4,500 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | - | 500mOhm @ 6A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF831N-CHANNEL POWER MOSFET Harris Corporation |
1,610 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
