电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFP7N40N-CHANNEL POWER MOSFET Harris Corporation |
471 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 7A (Tc) | 10V | 750mOhm @ 3.5A, 10V | 4V @ 1mA | - | ±20V | 1600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IRF9530MOSFET P-CH 100V 12A TO220AB Harris Corporation |
3,295 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | - | 300mOhm @ 6.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFP141N-CHANNEL POWER MOSFET Harris Corporation |
288 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31A (Tc) | 10V | 77mOhm @ 19A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
RFP15P05MOSFET P-CH 50V 15A TO220-3 Harris Corporation |
88,449 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50 V | 15A (Tc) | 10V | 150mOhm @ 15A, 10V | 4V @ 250µA | 150 nC @ 20 V | ±20V | 1150 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
IRF632N-CHANNEL POWER MOSFET Harris Corporation |
16,865 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 8A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF9630MOSFET P-CH 200V 6.5A TO220AB Harris Corporation |
16,310 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFPC406.8A 600V 1.200 OHM N-CHANNEL Harris Corporation |
968 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
RF1S40N10SMN-CHANNEL POWER MOSFET Harris Corporation |
300 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
|
HUF75639S3MOSFET N-CH 100V 56A I2PAK Harris Corporation |
5,257 | - |
|
数据手册 |
UltraFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
|
IRFP341N-CHANNEL POWER MOSFET Harris Corporation |
233 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 11A (Tc) | 10V | 550mOhm @ 5.5A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
