电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUF75337P3MOSFET N-CH 55V 75A TO220-3 Harris Corporation |
2,600 | - |
|
数据手册 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 14mOhm @ 75A, 10V | 4V @ 250µA | 109 nC @ 20 V | ±20V | 1775 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
RFP2NO8L2A, 80V, 1.05OHM, N CHANNEL MOSF Harris Corporation |
1,609 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
HUF75307T3ST13613A, 55V, 0.090 OHM, N CHANNEL, Harris Corporation |
3,263 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF512S25324.9A, 100V, 0.74 OHM, N-CHANNEL Harris Corporation |
1,200 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RFP2P08P-CHANNEL POWER MOSFET Harris Corporation |
3,542 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 2A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
RFP2N08N-CHANNEL, MOSFET Harris Corporation |
3,360 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 2A (Tc) | 10V | 1.05Ohm @ 2A, 5V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
HUF75309D3SMOSFET N-CH 55V 19A DPAK Harris Corporation |
14,180 | - |
|
数据手册 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 70mOhm @ 19A, 10V | 4V @ 250µA | 24 nC @ 20 V | ±20V | 350 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
RFP2N10N-CHANNEL, MOSFET Harris Corporation |
1,323 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2A (Tc) | 10V | 1.05Ohm @ 2A, 5V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
RFD4N06LN-CHANNEL POWER MOSFET Harris Corporation |
1,424 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4A (Tc) | 5V | 600mOhm @ 1A, 5V | 2.5V @ 250µA | 8 nC @ 10 V | ±10V | - | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
RFD8P06EP-CHANNEL POWER MOSFET Harris Corporation |
2,278 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
