电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFD14N06LSM9AN-CHANNEL POWER MOSFET Harris Corporation |
2,500 | - |
|
数据手册 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFD112SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation |
1,371 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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IRFR1219AN-CHANNEL POWER MOSFET Harris Corporation |
2,500 | - |
|
数据手册 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
IRFR91109AP-CHANNEL POWER MOSFET Harris Corporation |
2,500 | - |
|
数据手册 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFR321N-CHANNEL POWER MOSFET Harris Corporation |
1,802 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 3.1A (Ta) | 10V | 1.8Ohm @ 1.7A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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RF1K49211N-CHANNEL POWER MOSFET Harris Corporation |
1,588 | - |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 7A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC |
|
RFD20N03N-CHANNEL POWER MOSFET Harris Corporation |
10,550 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 25mOhm @ 20A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1150 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRF710PFET, 2A I(D), 400V, 3.6OHM, 1-E Harris Corporation |
4,630 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF621N-CHANNEL POWER MOSFET Harris Corporation |
13,250 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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BUZ73AMOSFET N-CH 200V 5.5A TO220-3 Harris Corporation |
12,259 | - |
|
数据手册 |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
