电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFP30N6LER454130A, 60V, LOGIC LEVEL N CHANNEL Harris Corporation |
4,000 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RLP03N06CLEN-CHANNEL POWER MOSFET Harris Corporation |
3,673 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF822N-CHANNEL POWER MOSFET Harris Corporation |
20,598 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.2A (Tc) | 10V | 4Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
RFP2N12N-CHANNEL, MOSFET Harris Corporation |
1,550 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 2A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IRFR422N-CHANNEL POWER MOSFET Harris Corporation |
1,139 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.2A (Tc) | 10V | 4Ohm @ 1.3A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
HUF76121S3N-CHANNEL POWER MOSFET Harris Corporation |
3,600 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF711N-CHANNEL POWER MOSFET Harris Corporation |
6,031 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
RFD7N10LEN-CHANNEL POWER MOSFET Harris Corporation |
5,942 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7A (Tc) | 5V | 300mOhm @ 7A, 5V | 2V @ 250µA | 150 nC @ 10 V | +10V, -8V | 360 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
RLD03N06CLESM9AN-CHANNEL POWER MOSFET Harris Corporation |
2,500 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
RFP45N02LN-CHANNEL POWER MOSFET Harris Corporation |
1,871 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 45A (Tc) | 5V | 22mOhm @ 45A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1300 pF @ 15 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
