电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFD16N02L16A, 20V, 0.022 OHM, N-CHANNEL L Harris Corporation |
1,793 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Tc) | 5V | 22mOhm @ 16A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1300 pF @ 20 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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IRF712S24971.7A, 400V, 5OHM, N-CHANNEL, Harris Corporation |
1,600 | - |
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数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP2P10P-CHANNEL POWER MOSFET Harris Corporation |
11,516 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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HUF75307D3MOSFET N-CH 55V 15A IPAK Harris Corporation |
7,768 | - |
|
数据手册 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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RF1S15N06SMN-CHANNEL POWER MOSFET Harris Corporation |
4,894 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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IRFD1Z3SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation |
12,328 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Tc) | 10V | 3.2Ohm @ 250mA, 10V | 4V @ 250µA | 3 nC @ 10 V | ±20V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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RF1S45N02LSM9AN-CHANNEL POWER MOSFET Harris Corporation |
2,400 | - |
|
数据手册 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFP6P10P-CHANNEL POWER MOSFET Harris Corporation |
41,954 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | - | ±20V | 800 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF9512P-CHANNEL POWER MOSFET Harris Corporation |
4,210 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.5A (Tc) | 10V | 1.6Ohm @ 1.5A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFD1101A, 100V, 0.600 OHM, N-CHANNEL Harris Corporation |
43,868 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
