电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFP4N05N-CHANNEL POWER MOSFET Harris Corporation |
6,728 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 4A (Tc) | 10V | 800mOhm @ 4A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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RFP8N20N-CHANNEL POWER MOSFET Harris Corporation |
2,366 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 8A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 1mA | - | ±20V | 750 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RFP12N06RLEN-CHANNEL POWER MOSFET Harris Corporation |
13,334 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±16V | 485 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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IRF8202.5A, 500V, 3.000 OHM, N-CHANNEL Harris Corporation |
3,895 | - |
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数据手册 |
PowerMESH™ II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 315 pF @ 25 V | - | 80W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RFP2N20N-CHANNEL, MOSFET Harris Corporation |
1,552 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2A (Tc) | 10V | 3.5Ohm @ 2A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
RFD16N05LSMN-CHANNEL POWER MOSFET Harris Corporation |
1,356 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 16A (Tc) | 4V, 5V | 47mOhm @ 16A, 5V | 2V @ 250mA | 80 nC @ 10 V | ±10V | - | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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BUZ76AN-CHANNEL POWER MOSFET Harris Corporation |
10,000 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2.6A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 4V @ 1mA | - | ±20V | 500 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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RFP15N08LN-CHANNEL POWER MOSFET Harris Corporation |
49,688 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 15A (Tc) | 5V | 140mOhm @ 7.5A, 5V | 2.5V @ 1mA | 80 nC @ 10 V | ±10V | - | - | 72W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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IRF521N-CHANNEL POWER MOSFET Harris Corporation |
25,650 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.2A (Tc) | 10V | 270mOhm @ 5.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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RFD14N06N-CHANNEL POWER MOSFET Harris Corporation |
3,664 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 14A, 10V | 4V @ 250µA | 40 nC @ 20 V | ±20V | 570 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
