电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF723N-CHANNEL POWER MOSFET Harris Corporation |
77,397 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 2.8A (Tc) | 10V | 2.5Ohm @ 1.8A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IRFD9123MOSFET P-CH 100V 1A 4DIP Harris Corporation |
15,501 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | - | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | - | 390 pF @ 25 V | - | - | - | - | - | Through Hole | 4-HVMDIP |
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IRF631N-CHANNEL POWER MOSFET Harris Corporation |
5,221 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Tc) | 10V | 400mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
RF1S22N10SMN-CHANNEL POWER MOSFET Harris Corporation |
3,853 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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IRF740S251510A, 400V, 0.55OHM, N-CHANNEL, P Harris Corporation |
2,200 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HUF76129P3N-CHANNEL POWER MOSFET Harris Corporation |
23,975 | - |
|
数据手册 |
UltraFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 56A (Tc) | 4.5V, 10V | 16mOhm @ 56A, 10V | 3V @ 250µA | 45 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 105W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
HUF75333P3MOSFET N-CH 55V 66A TO220-3 Harris Corporation |
2,197 | - |
|
数据手册 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 66A (Tc) | - | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRF9522P-CHANNEL POWER MOSFET Harris Corporation |
1,768 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 5A (Tc) | 10V | 800mOhm @ 3.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RLD03N06CLESMN-CHANNEL POWER MOSFET Harris Corporation |
1,025 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF630MOSFET N-CH 200V 9A TO220AB Harris Corporation |
11,535 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | - | 800 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220AB |
