电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFD2100.6A 200V 1.500 OHM N-CHANNEL Harris Corporation |
1,014 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
|
IRFD9120MOSFET P-CH 100V 1A 4DIP Harris Corporation |
40,822 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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RFP50N05N-CHANNEL POWER MOSFET Harris Corporation |
22,264 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250nA | 160 nC @ 20 V | ±20V | - | - | 132W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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RFD8P05SM9AP-CHANNEL POWER MOSFET Harris Corporation |
3,171 | - |
|
数据手册 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HUF75339P3MOSFET N-CH 55V 75A TO220-3 Harris Corporation |
13,980 | - |
|
数据手册 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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RF1S45N06LESM9AN-CHANNEL POWER MOSFET Harris Corporation |
1,600 | - |
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数据手册 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF9520MOSFET P-CH 100V 6A TO220AB Harris Corporation |
6,668 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | - | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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HRF3205L100A 55V 0.008 OHM N-CHANNEL Harris Corporation |
2,210 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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RFM3N45N-CHANNEL POWER MOSFET Harris Corporation |
1,840 | - |
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数据手册 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 1mA | - | ±20V | 750 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3 |
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RF1S45N06LE45A, 60V, 0.028OHM, N-CHANNEL, Harris Corporation |
1,530 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 5V | 28mOhm @ 45A, 5V | 2V @ 250µA | 135 nC @ 10 V | ±10V | 2150 pF @ 25 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
