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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFP440MOSFET N-CH 500V 8.8A TO247-3 Harris Corporation |
1,892 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.8A (Tc) | 10V | 850mOhm @ 5.3A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFF111N-CHANNEL POWER MOSFET Harris Corporation |
176 | - |
|
数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 3.5A (Tc) | 10V | 600mOhm @ 1.5A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
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IRF244N-CHANNEL POWER MOSFET Harris Corporation |
26,290 | - |
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数据手册 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.8A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3 |
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RF1S4N100SM9AMOSFET N-CH 1000V 4.3A TO263AB Harris Corporation |
187 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4.3A (Tc) | - | 3.5Ohm @ 2.5A, 10V | 4V @ 250µA | - | ±20V | - | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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RFH30N12N-CHANNEL POWER MOSFET Harris Corporation |
268 | - |
|
数据手册 |
- | TO-218-3 Isolated Tab, TO-218AC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 30A (Tc) | 10V | 75mOhm @ 15A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-218 Isolated |
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IRFP451N-CHANNEL POWER MOSFET Harris Corporation |
538 | - |
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数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 14A (Tc) | 10V | 400mOhm @ 7.9A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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RFH30N15N-CHANNEL POWER MOSFET Harris Corporation |
1,417 | - |
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数据手册 |
- | TO-218-3 Isolated Tab, TO-218AC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 30A (Tc) | 10V | 75mOhm @ 15A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-218 Isolated |
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RFH10N50N-CHANNEL POWER MOSFET Harris Corporation |
302 | - |
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数据手册 |
- | TO-218-3 Isolated Tab, TO-218AC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-218 Isolated |
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IRFP462N-CHANNEL POWER MOSFET Harris Corporation |
152 | - |
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数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 350mOhm @ 11A, 10V | 4V @ 250µA | 190 nC @ 10 V | ±20V | 4100 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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IRF353N-CHANNEL POWER MOSFET Harris Corporation |
295 | - |
|
数据手册 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 13A (Tc) | 10V | 400mOhm @ 8A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3 |
