电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFP362N-CHANNEL POWER MOSFET Harris Corporation |
173 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 20A (Tc) | 10V | 250mOhm @ 13A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
RFG50N05N-CHANNEL POWER MOSFET Harris Corporation |
145 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250nA | 160 nC @ 20 V | ±20V | - | - | 132W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
|
RFA100N05EN-CHANNEL POWER MOSFET Harris Corporation |
1,544 | - |
|
数据手册 |
- | TO-218-5 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 100A (Tc) | 10V | 8mOhm @ 100A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-218-5 |
|
|
SK3991MOSFET 2N-CH 25V 0.03A TO72 Harris Corporation |
986 | - |
|
数据手册 |
- | TO-206AF, TO-72-4 Metal Can | Bulk | Active | - | MOSFET (Metal Oxide) | - | 30mA | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-72 |
|
|
RFG75N05EN-CHANNEL POWER MOSFET Harris Corporation |
18,160 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 400 nC @ 20 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
2N6792TX2A, 400V, 1.8OHM, N-CHANNEL Harris Corporation |
335 | - |
|
数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 1.8Ohm @ 1.25A, 10V | 4V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
|
|
BUZ60BU400V, N-CHANNEL POWER MOSFET Harris Corporation |
200 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RFD8P06LE8A, 60V, 0.33OHM, P-CHANNEL POWE Harris Corporation |
1,753 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
HUF76113T3ST4.7 A, 30 V, 0.031 OHM, N-CHANNE Harris Corporation |
3,500 | - |
|
数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRFU322N-CHANNEL POWER MOSFET Harris Corporation |
898 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2.6A (Ta) | 10V | 2.5Ohm @ 1.7A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
