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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HUF76629D3SMOSFET N-CH 100V 20A TO252AA Harris Corporation |
458 | - |
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数据手册 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1285 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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IRF543N-CHANNEL POWER MOSFET Harris Corporation |
965 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 25A (Tc) | 10V | 100mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF121-00019.2A, 80V, 0.27OHM, N CHANNEL MO Harris Corporation |
500 | - |
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数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RF1S42N03L42A, 30V, 0.025 OHMS, N-CHANNEL Harris Corporation |
400 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | 5V | 25mOhm @ 42A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1650 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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RFL1N12N-CHANNEL POWER MOSFET Harris Corporation |
845 | - |
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数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 1A (Tc) | 10V | 1.9Ohm @ 1A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 8.33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
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IRFR4202.5A 500V 3.000 OHM N-CHANNEL Harris Corporation |
690 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRF642RN-CHANNEL POWER MOSFET Harris Corporation |
500 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 220mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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RF1S45N03LN-CHANNEL POWER MOSFET Harris Corporation |
770 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 5V | 22mOhm @ 45A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1650 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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IRFD313N-CHANNEL POWER MOSFET Harris Corporation |
900 | - |
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数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 300mA (Tc) | 10V | 5Ohm @ 200mA, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip |
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RF1S45N06SMN-CHANNEL POWER MOSFET Harris Corporation |
700 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
