电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFP15N05LMOSFET N-CH 50V 15A TO220-3 Harris Corporation |
404 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 15A (Tc) | 5V | 140mOhm @ 15A, 5V | 2V @ 250µA | - | ±10V | 900 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRF9543P-CHANNEL POWER MOSFET Harris Corporation |
430 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 15A (Tc) | 10V | 300mOhm @ 10A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRFBC42N-CHANNEL POWER MOSFET Harris Corporation |
1,000 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.4A (Tc) | 10V | 1.6Ohm @ 3.4A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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RF1S45N06LESMN-CHANNEL POWER MOSFET Harris Corporation |
843 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263AB |
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IRFR9120MOSFET P-CH 100V 5.6A DPAK Harris Corporation |
975 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRF843N-CHANNEL POWER MOSFET Harris Corporation |
700 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 7A (Tc) | 10V | 1.1Ohm @ 4.4A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1225 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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RFH75N0575A, 50V, 0.008OHM, N-CHANNEL, Harris Corporation |
2,201 | - |
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数据手册 |
- | TO-218-3 Isolated Tab, TO-218AC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-218 Isolated |
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RF1S530SM9A14A, 100V, 0.16OHM, N-CHANNEL PO Harris Corporation |
800 | - |
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数据手册 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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JANSR2N729225A, 100V, 0.070 OHM, RAD HARD, Harris Corporation |
4,565 | - |
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数据手册 |
- | TO-254-3, TO-254AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 70mOhm @ 20A, 10V | 5V @ 1mA | 552 nC @ 20 V | ±20V | - | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-254AA |
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IRF151N-CHANNEL POWER MOSFET Harris Corporation |
5,800 | - |
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数据手册 |
- | TO-204AE | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 55mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-204AE |
