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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFPG42N-CHANNEL POWER MOSFET Harris Corporation |
2,125 | - |
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数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.9A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | - | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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RF1S9540P-CHANNEL POWER MOSFETS Harris Corporation |
7,199 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 10V | 200mOhm @ 10A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK (TO-262) |
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RFP10P15P-CHANNEL POWER MOSFET Harris Corporation |
69,058 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 10V | 500mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 1700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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IRF331N-CHANNEL POWER MOSFET Harris Corporation |
4,599 | - |
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数据手册 |
- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3 |
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RFB18N10CSMOSFET N-CH 100V 18A TO220AB-5 Harris Corporation |
674 | - |
|
数据手册 |
- | TO-220-5 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | - | 100mOhm @ 9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | - | Current Sensing | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB-5 |
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IRFP243N-CHANNEL POWER MOSFET Harris Corporation |
181 | - |
|
数据手册 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 220mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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RFP25N06LN-CHANNEL, MOSFET Harris Corporation |
1,389 | - |
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数据手册 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 5V | 85mOhm @ 12.5A, 5V | 2V @ 1mA | - | ±10V | 2000 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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RF1S640SMMOSFET N-CH 200V 18A TO263AB Harris Corporation |
665 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | - | 180mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB |
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RFG30P05P-CHANNEL POWER MOSFET Harris Corporation |
1,617 | - |
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数据手册 |
- | TO-247-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 30A (Tc) | 10V | 65mOhm @ 30A, 10V | 4V @ 250µA | 170 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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IRFF433N-CHANNEL POWER MOSFET Harris Corporation |
250 | - |
|
数据手册 |
- | TO-205AF Metal Can | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 2.25A (Tc) | 10V | 2Ohm @ 1.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-205AF (TO-39) |
