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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJA64EP-T1_BE3N-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix |
17,989 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 10V | 32mOhm @ 4A, 10V | 3.5V @ 250µA | 12 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 Dual |
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SIRA26DP-T1-RE3MOSFET N-CH 25V 60A PPAK SO-8 Vishay Siliconix |
2,499 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.5V @ 250µA | 44 nC @ 10 V | +16V, -12V | 2247 pF @ 10 V | - | 43.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQJA70EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix |
5,977 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14.7A (Tc) | 10V | 95mOhm @ 4A, 10V | 3.5V @ 250µA | 7 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQS405CENW-T1_GE3AUTOMOTIVE P-CHANNEL 12 V (D-S) Vishay Siliconix |
5,813 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Tc) | 2.5V, 4.5V | 15mOhm @ 13.5A, 4.5V | 1V @ 250µA | 81 nC @ 8 V | ±8V | 3050 pF @ 6 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 1212-8 |
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SQJA68EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix |
2,196 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 4.5V, 10V | 92mOhm @ 4A, 10V | 2.5V @ 250µA | 8 nC @ 10 V | ±20V | 280 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQ3410EV-T1_BE3N-CHANNEL 30-V (D-S) 175C MOSFET Vishay Siliconix |
8,262 | - |
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数据手册 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 17.5mOhm @ 5A, 10V | 2.5V @ 250µA | 21 nC @ 10 V | ±20V | 1005 pF @ 15 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 6-TSOP |
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SI7772DP-T1-GE3MOSFET N-CH 30V 35.6A PPAK SO-8 Vishay Siliconix |
5,710 | - |
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数据手册 |
SkyFET®, TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35.6A (Tc) | 4.5V, 10V | 13mOhm @ 15A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1084 pF @ 15 V | - | 3.9W (Ta), 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SISHA18ADN-T1-GE3N-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix |
12,009 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 60A (Tc) | 4.5V, 10V | 4.6mOhm @ 10A, 10V | 2.5V @ 250µA | 33 nC @ 10 V | +20V, -16V | 1650 pF @ 15 V | - | 3.5W (Ta), 26.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
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SI3459BDV-T1-BE3P-CHANNEL 60-V (D-S) MOSFET Vishay Siliconix |
1,880 | - |
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数据手册 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.2A (Ta), 2.9A (Tc) | 4.5V, 10V | 216mOhm @ 2.2A, 10V | 3V @ 250µA | 12 nC @ 10 V | ±20V | 350 pF @ 30 V | - | 2W (Ta), 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
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SISA26DN-T1-GE3MOSFET N-CH 25V 60A PPAK1212-8S Vishay Siliconix |
5,532 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.5V @ 250µA | 44 nC @ 10 V | +16V, -12V | 2247 pF @ 10 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
