| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI3433CDV-T1-BE3P-CHANNEL 20-V (D-S) MOSFET Vishay Siliconix |
5,395 | - |
|
数据手册 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.2A (Ta), 6A (Tc) | 1.8V, 4.5V | 38mOhm @ 5.2A, 4.5V | 1V @ 250µA | 45 nC @ 8 V | ±8V | 1300 pF @ 10 V | - | 1.6W (Ta), 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
|
SI1480DH-T1-BE3MOSFET N-CH 100V 2.1A/2.6A SC70 Vishay Siliconix |
2,962 | - |
|
数据手册 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.1A (Ta), 2.6A (Tc) | - | 200mOhm @ 1.9A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 130 pF @ 50 V | - | 1.5W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-70-6 |
|
SI3433CDV-T1-E3MOSFET P-CH 20V 6A 6TSOP Vishay Siliconix |
1,280 | - |
|
数据手册 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 1.8V, 4.5V | 38mOhm @ 5.2A, 4.5V | 1V @ 250µA | 45 nC @ 8 V | ±8V | 1300 pF @ 10 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
|
SQ3456CEV-T1_GE3AUTOMOTIVE N-CHANNEL 30 V (D-S) Vishay Siliconix |
2,250 | - |
|
数据手册 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.8A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 460 pF @ 15 V | - | 4W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 6-TSOP |
|
SIA811ADJ-T1-GE3MOSFET P-CH 20V 4.5A PPAK SC70-6 Vishay Siliconix |
2,751 | - |
|
数据手册 |
LITTLE FOOT® | PowerPAK® SC-70-6 Dual | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Tc) | 1.8V, 4.5V | 116mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13 nC @ 8 V | ±8V | 345 pF @ 10 V | Schottky Diode (Isolated) | 1.8W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 Dual |
|
SIRA28BDP-T1-GE3MOSFET N-CH 30V 18A/38A PPAK SO8 Vishay Siliconix |
6,427 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 38A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.4V @ 250µA | 14 nC @ 10 V | +20V, -16V | 582 pF @ 15 V | - | 3.8W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQA407CEJW-T1_GE3AUTOMOTIVE P-CHANNEL 20 V (D-S) Vishay Siliconix |
5,888 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 2.5V, 4.5V | 25mOhm @ 4.5A, 4.5V | 1.3V @ 250µA | 24 nC @ 4.5 V | ±12V | 2100 pF @ 10 V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerPAK®SC-70W-6 |
|
SIAA02DJ-T1-GE3MOSFET N-CH 20V 22A/52A PPAK Vishay Siliconix |
7,180 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SC-70-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 22A (Ta), 52A (Tc) | 2.5V, 10V | 4.7mOhm @ 8A, 10V | 1.6V @ 250µA | 33 nC @ 10 V | +12V, -8V | 1250 pF @ 10 V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 |
|
SI8424CDB-T1-E1MOSFET N-CH 8V 4MICROFOOT Vishay Siliconix |
1,980 | - |
|
数据手册 |
TrenchFET® | 4-UFBGA, WLCSP | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8 V | 6.3A (Ta) | 1.2V, 4.5V | 20mOhm @ 2A, 4.5V | 800mV @ 250µA | 40 nC @ 4.5 V | ±5V | 2340 pF @ 4 V | - | 1.1W (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-Microfoot |
|
SQA446CEJW-T1_GE3AUTOMOTIVE N-CHANNEL 20 V (D-S) Vishay Siliconix |
38,713 | - |
|
数据手册 |
TrenchFET® | 6-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 2.5V, 4.5V | 17.5mOhm @ 4.5A, 4.5V | 1.3V @ 250µA | 10 nC @ 4.5 V | ±12V | 910 pF @ 10 V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PowerPAK®SC-70W-6 |

