电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHB28N60EF-GE3MOSFET N-CH 600V 28A D2PAK Vishay Siliconix |
1,229 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
SIHP35N60EF-GE3MOSFET N-CH 600V 32A TO220AB Vishay Siliconix |
728 | - |
|
数据手册 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134 nC @ 10 V | ±30V | 2568 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
.jpg)
|
SIHB053N60E-GE3E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix |
1,005 | - |
|
数据手册 |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 54mOhm @ 26.5A, 10V | 5V @ 250µA | 92 nC @ 10 V | ±30V | 3722 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHG30N60E-GE3MOSFET N-CH 600V 29A TO247AC Vishay Siliconix |
500 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIJH5800E-T1-GE3N-CHANNEL 80 V (D-S) 175C MOSFET Vishay Siliconix |
3,786 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Ta), 302A (Tc) | 7.5V, 10V | 1.35mOhm @ 20A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±20V | 7730 pF @ 40 V | - | 3.3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
|
SIHG100N60E-GE3MOSFET N-CH 600V 30A TO247AC Vishay Siliconix |
359 | - |
|
数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 1851 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SUP85N10-10-E3MOSFET N-CH 100V 85A TO220AB Vishay Siliconix |
315 | - |
|
数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 6550 pF @ 25 V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRFPF50PBFMOSFET N-CH 900V 6.7A TO247-3 Vishay Siliconix |
436 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.7A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
|
SIHP052N60EF-GE3MOSFET EF SERIES TO-220AB Vishay Siliconix |
934 | - |
|
数据手册 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 52mOhm @ 23A, 10V | 5V @ 250µA | 101 nC @ 10 V | ±30V | 3380 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
SIHB055N60EF-GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
744 | - |
|
数据手册 |
EF | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 55mOhm @ 26.5A, 10V | 5V @ 250µA | 95 nC @ 10 V | ±30V | 3707 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
