| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFPC60LCPBFMOSFET N-CH 600V 16A TO247-3 Vishay Siliconix |
602 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SQW44N65EF-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
375 | - |
|
数据手册 |
E | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 73mOhm @ 22A, 10V | 4V @ 250µA | 266 nC @ 10 V | ±30V | 5858 pF @ 100 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247AD |
|
SIHH068N60E-T1-GE3MOSFET N-CH 600V 34A PPAK 8 X 8 Vishay Siliconix |
217 | - |
|
数据手册 |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 68mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2650 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
SIHG47N60E-GE3MOSFET N-CH 600V 47A TO247AC Vishay Siliconix |
374 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 64mOhm @ 24A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±30V | 9620 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG050N60E-GE3MOSFET N-CH 600V 51A TO247AC Vishay Siliconix |
392 | - |
|
数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 3459 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG039N60E-GE3MOSFET N-CH 600V 63A TO247AC Vishay Siliconix |
500 | - |
|
数据手册 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 63A (Tc) | 10V | 39mOhm @ 32A, 10V | 5V @ 250µA | 126 nC @ 10 V | ±30V | 4369 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG80N60EF-GE3MOSFET N-CH 600V 80A TO247AC Vishay Siliconix |
460 | - |
|
数据手册 |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 400 nC @ 10 V | ±30V | 6600 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SIHG73N60E-GE3MOSFET N-CH 600V 73A TO247AC Vishay Siliconix |
114 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±30V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SI1442DH-T1-BE3MOSFET N-CH 12V 4A SC70-6 Vishay Siliconix |
2,980 | - |
|
数据手册 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 4A (Ta) | - | 20mOhm @ 6A, 4.5V | 1V @ 250µA | 33 nC @ 8 V | ±8V | 1010 pF @ 6 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-70-6 |
|
SI3456DDV-T1-BE3N-CHANNEL 30-V (D-S) MOSFET Vishay Siliconix |
4,397 | - |
|
数据手册 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta), 6.3A (Tc) | 4.5V, 10V | 40mOhm @ 5A, 10V | 3V @ 250µA | 9 nC @ 10 V | ±20V | 325 pF @ 15 V | - | 1.7W (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |

