电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SISHA12ADN-T1-GE3MOSFET N-CH 30V 22A/25A PPAK Vishay Siliconix |
2,943 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 25A (Tc) | 4.5V, 10V | 4.3mOhm @ 10A, 10V | 2.2V @ 250µA | 45 nC @ 10 V | +20V, -16V | 2070 pF @ 15 V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
|
SQJ150EP-T1_GE3MOSFET N-CH 40V 66A PPAK SO-8 Vishay Siliconix |
2,500 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 66A (Tc) | 10V | 8.4mOhm @ 15A, 10V | 3.5V @ 250µA | 20 nC @ 10 V | ±20V | 1274 pF @ 25 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SUD20N10-66L-BE3MOSFET N-CH 100V 16.9A DPAK Vishay Siliconix |
1,630 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16.9A (Tc) | 4.5V, 10V | 66mOhm @ 6.6A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 860 pF @ 50 V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRFL014TRPBF-BE3MOSFET N-CH 60V 2.7A SOT223 Vishay Siliconix |
4,480 | - |
|
数据手册 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.7A (Tc) | - | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
SQJ414EP-T1_BE3N-CHANNEL 30-V (D-S) 175C MOSFET Vishay Siliconix |
17,929 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 12mOhm @ 4.5A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1110 pF @ 15 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
SQJ146ELP-T1_GE3MOSFET N-CH 40V 74A PPAK SO-8 Vishay Siliconix |
2,964 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 74A (Tc) | 4.5V, 10V | 5.8mOhm @ 15A, 10V | 2.2V @ 250µA | 35 nC @ 10 V | ±20V | 1780 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
|
|
SQJ476EP-T1_BE3N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix |
2,507 | - |
|
数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 4.5V, 10V | 38mOhm @ 10A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR474DP-T1-GE3MOSFET N-CH 30V 20A PPAK SO-8 Vishay Siliconix |
614 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 9.5mOhm @ 10A, 10V | 2.2V @ 250µA | 27 nC @ 10 V | ±20V | 985 pF @ 15 V | - | 3.9W (Ta), 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIS4604DN-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
9,520 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14.6A (Ta), 44.4A (Tc) | 7.5V, 10V | 9.5mOhm @ 10A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 960 pF @ 30 V | - | 3.6W (Ta), 33.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
|
|
SQS840EN-T1_BE3N-CHANNEL 40-V (D-S) 175C MOSFET Vishay Siliconix |
8,928 | - |
|
数据手册 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 7.5A, 10V | 2.5V @ 250µA | 22.5 nC @ 10 V | ±20V | 1031 pF @ 20 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
