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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJ868EP-T1_BE3N-CHANNEL 40-V (D-S) 175C MOSFET Vishay Siliconix |
5,988 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Tc) | 10V | 7.35mOhm @ 14A, 10V | 3.5V @ 250µA | 55 nC @ 10 V | ±20V | 2450 pF @ 20 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 Dual |
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IRFR110PBF-BE3MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
2,961 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | - | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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IRFR110TRPBF-BE3MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
1,850 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SIR588DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET POWE Vishay Siliconix |
5,930 | - |
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数据手册 |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 17.2A (Ta), 59.5A (Tc) | 7.5V, 10V | 8mOhm @ 10A, 10V | 4V @ 250µA | 28.5 nC @ 10 V | ±20V | 1380 pF @ 40 V | - | 5W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQ4005EY-T1_BE3MOSFET P-CHANNEL 12V 15A 8SOIC Vishay Siliconix |
1,430 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 15A (Tc) | 2.5V, 4.5V | 22mOhm @ 13.5A, 4.5V | 1V @ 250µA | 38 nC @ 4.5 V | ±8V | 3600 pF @ 6 V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SISHA06DN-T1-GE3N-CHANNEL 30 V (D-S) MOSFET POWE Vishay Siliconix |
11,905 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8SH | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28.1A (Ta), 104A (Tc) | 4.5V, 10V | 3mOhm @ 10A, 10V | 2.4V @ 250µA | 67 nC @ 10 V | +20V, -16V | 3932 pF @ 15 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SH |
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SQS462EN-T1_BE3N-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix |
15,060 | - |
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数据手册 |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4.5V, 10V | 63mOhm @ 4.3A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SQ4431EY-T1_BE3MOSFET P-CH 30V 10.8A 8SOIC Vishay Siliconix |
4,893 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.8A (Tc) | 4.5V, 10V | 30mOhm @ 6A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1265 pF @ 15 V | - | 6W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SIS106DN-T1-GE3MOSFET N-CH 60V 9.8A/16A PPAK Vishay Siliconix |
6,003 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9.8A (Ta), 16A (Tc) | 7.5V, 10V | 18.5mOhm @ 4A, 10V | 4V @ 250µA | 13.5 nC @ 10 V | ±20V | 540 pF @ 30 V | - | 3.2W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIRA32DP-T1-RE3MOSFET N-CH 25V 60A PPAK SO-8 Vishay Siliconix |
2,032 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250µA | 83 nC @ 10 V | +16V, -12V | 4450 pF @ 10 V | - | 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
